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參數(shù)資料
| 型號(hào)： | USM12J48 |
| 元件分類： | 晶閘管 |
| 英文描述： | 600 V, 12 A, TRIAC |
| 封裝： | 13-10J2A, 3 PIN |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 199K |
| 代理商： | USM12J48 |
SM12(G,J)48,USM12(G,J)48,SM12(G,J)48A,USM12(G,J)48A
2001-07-13
2
MAXIMUM RATINGS
CHARACTERISTIC
SYMBOL
RATING
UNIT
(U)SM12G48
(U)SM12G48A
400
Repetitive Peak
Off-State Voltage
(U)SM12J48
(U)SM12J48A
VDRM
600
V
R.M.S On-State Current
IT (RMS)
12
A
120 (50Hz)
Peak One Cycle Surge On-State
Current (Non-Repetitive)
ITSM
132 (60Hz)
A
I
2
t Limit Value
I
2
t
72
A
2
s
Critical Rate of Rise of
On-State Current
(Note 1)
di /dt
50
A /
ms
Peak Gate Power Dissipation
PGM
5
W
Average Gate Power Dissipation
PG (AV)
0.5
W
Peak Forward Gate Voltage
VGM
10
V
Peak Forward Gate Current
IGM
2
A
Junction Temperature
Tj
40~125
°C
Storage Temperature Range
Tstg
40~125
°C
ELECTRICAL CHARACTERISTICS (Ta=25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Repetitive Peak Off-State Current
IDRM
VDRM=Rated
―
20
mA
I
T2 (
+) , Gate (+)
―
1.5
II
T2 (
+) , Gate (-)
―
1.5
III
T2 (
-) , Gate (-)
―
1.5
Gate Trigger Voltage
IV
VGT
VD=12V
RL=20W
T2 (
-) , Gate (+)
―
V
I
T2 (
+) , Gate (+)
―
30
II
T2 (
+) , Gate (-)
―
30
III
T2 (
-) , Gate (-)
―
30
SM12G48
SM12J48
IV
T2 (
-) , Gate (+)
―
I
T2 (
+) , Gate (+)
―
20
II
T2 (
+) , Gate (-)
―
20
III
T2 (
-) , Gate (-)
―
20
Gate Trigger
Current
SM12G48A
SM12J48A
IV
IGT
VD=12V
RL=20W
T2 (
-) , Gate (+)
―
mA
Peak On-State Voltage
VTM
ITM=17A
―
1.5
V
Gate Non-Trigger Voltage
VGD
VD=Rated, Tc=125°C
0.2
―
V
Holding Current
IH
VD=12V, ITM=1A
―
50
mA
Thermal Resistance
Rth (j-c)
Junction to Case, AC
―
2.4
°C / W
(U)SM12G48
(U)SM12J48
―
300
―
Critical Rate of Rise of
Off-State Voltage
(U)SM12G48A
(U)SM12J48A
dv / dt
VDRM=Rated, Tj=125°C
Exponential Rise
―
200
―
V /
ms
(U)SM12G48
(U)SM12J48
10
―
Critical Rate of Rise of
Off-State Voltage at
Commutation
(U)SM12G48A
(U)SM12J48A
(dv / dt) c
VDRM=400V, Tj=125°C
(di / dt) c=6.5A / ms
4
―
V /
ms
Note 1 : VDRM=0.5×Rated
ITM≤15A
tgw≥10ms
tgr≤250ns
igp=IGT×2.0
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