參數(shù)資料
型號： USF5G49
廠商： Toshiba Corporation
英文描述： TOSHIBA Thyristor Silicon Planar Type
中文描述： 東芝硅平面型晶閘管
文件頁數(shù)： 1/6頁
文件大?。?/td> 208K
代理商： USF5G49
SF5G49,SF5J49,USF5G49,USF5J49
2002-02-05
1
TOSHIBA Thyristor Silicon Planar Type
SF5G49,SF5J49,USF5G49,USF5J49
Medium Power Control Applications
Repetitive peak off-state voltage: V
DRM
= 400, 600 V
Repetitive peak reverse voltage: V
RRM
= 400, 600 V
Average on-state current: I
T (AV)
= 5 A
Gate trigger current: I
GT
= 70 μA max
Maximum Ratings
Characteristics
Symbol
Rating
Unit
SF5G49
USF5G49
400
Repetitive peak off-state
voltage and Repetitive
peak reverse voltage
(R
GK
330 )
SF5J49
USF5J49
V
DRM
V
RRM
600
V
SF5G49
USF5G49
500
Non-repetitive peak
reverse voltage
(non-repetitive 5 ms,
T
j
0~125°C,
R
GK
330 )
SF5J49
USF5J49
V
RSM
720
V
Average on-state current
I
T (AV)
5
A
R.M.S on-state current
I
T (RMS)
7.8
A
Peak one cycle surge on-state current
(non-repetitive)
I
TSM
65 (50 Hz)
A
I
2
t limit value
I
2
t
20
A
2
s
Peak gate power dissipation
P
GM
0.5
W
Average gate power dissipation
P
G (AV)
0.05
W
Peak forward gate voltage
V
FGM
5
V
Peak reverse gate voltage
V
RGM
5
V
Peak forward gate current
I
GM
200
mA
Junction temperature
T
j
40~125
°C
Storage temperature range
T
stg
40~125
°C
Note: Should be used with gate resistance as follows:
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
13-7F1A
Weight: 0.36 g (typ.)
JEDEC
―
JEITA
―
TOSHIBA
13-F2A
Weight: 0.28 g (typ.)
Gate
Anode
Cathode
R
GK
330
相關(guān)PDF資料
PDF描述
USF5J49 TOSHIBA Thyristor Silicon Planar Type
USF8G48 Medium Power Control Application Silicon Planar Type Thyristor(中等功率控制應(yīng)用的平面型可控硅)
USF8J48 Medium Power Control Application Silicon Planar Type Thyristor(中等功率控制應(yīng)用的平面型可控硅)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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