參數(shù)資料
型號： USF05G49
廠商： Toshiba Corporation
英文描述： LOW POWER SWITCHING AND CONTROL APPLICATIONS
中文描述： 低電源開關(guān)和控制應(yīng)用
文件頁數(shù)： 1/6頁
文件大?。?/td> 351K
代理商： USF05G49
USF05G49
2004-07-06
1
Note:
Should be used with
gate resistance as
shown below.
TOSHIBA THYRISTOR SILICON PLANAR TYPE
USF05G49
LOW POWER SWITCHING AND CONTROL
APPLICATIONS
z
Repetitive Peak Off
State Voltage : V
DRM
= 400 V
Repetitive Peak Reverse Voltage
z
Average On
State Current
MAXIMUM RATINGS
: V
RRM
= 400 V
: I
T (AV)
= 500 mA
CHARACTERISTIC
SYMBOL
RATING
UNIT
Repetitive Peak Off
State Voltage
and Repetitive Peak Reverse
Voltage
V
DRM
V
RRM
400
V
Non-Repetitive Peak Reverse Voltage
(Non
Repetitive<5ms, Tj = 0~125°C)
V
RSM
500
V
Average On
State Current
(Half Sine Waveform)
I
T
(AV)
500
mA
R.M.S On
State Current
I
T
(RMS)
800
mA
9 (50Hz)
Peak One Cycle Surge On
State
Current (Non
Repetitive)
I
TSM
10 (60Hz)
A
I
2
t Limit Value
I
2
t
0.4
A
2
s
Critical Rate of Rise of On-State
Current
(Note 1)
di / dt
10
A / μs
Peak Gate Power Dissipation
P
GM
0.1
W
Average Gate Power Dissipation
P
G(AV)
0.01
W
Peak Forward Gate Voltage
V
FGM
3.5
V
Peak Reverse Gate Voltage
V
RGM
5
V
Peak Forward Gate Current
I
GM
125
mA
Junction Temperature
T
j
40~125
°C
Storage Temperature Range
T
stg
40~125
°C
Note 1: di / dt Test condition: i
G
= 5mA, t
gw
= 10μs, t
gr
≤
250ns
MARKING
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
13-5B1A
Weight: 0.2 g (typ.)
P A
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
相關(guān)PDF資料
PDF描述
USF10G48 TOSHIBA THYRISTOR SILICON PLANAR TYPE
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USF3J48 Medium Power Control Application Silicon Planar Type Thyristor(中等功率控制應(yīng)用的平面型可控硅)
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