參數(shù)資料
型號: US2881LSE-AAA-000-RE
廠商: Melexis Technologies NV
文件頁數(shù): 5/9頁
文件大?。?/td> 1135K
描述: IC LATCH CMOS H-S TSOT-3L
產(chǎn)品目錄繪圖: TSOT-3L Series Top
標準包裝: 1
傳感范圍: 4.5mT 跳閘,-4.5mT 釋放
類型: 雙極卡鎖
電源電壓: 3.5 V ~ 24 V
電流 - 電源: 5mA
電流 - 輸出(最大): 50mA
輸出類型: 數(shù)字式,開漏極
工作溫度: -40°C ~ 150°C
封裝/外殼: TO-236-3,SC-59,SOT-23-3
供應(yīng)商設(shè)備封裝: TSOT-23-3
包裝: 標準包裝
產(chǎn)品目錄頁面: 2792 (CN2011-ZH PDF)
其它名稱: US2881LSEDKR
US2881LSEDKR-ND
 
1
Rev 013
 
 
 
9 Detailed General Desc i
 
Based on mixed signal CMOS techn
sensitivity. It allows using generic m
 
The chopper-stabilized amplifier uses
with Hall sensors and amplifiers. The
contributes to smaller chip size and l
also an important factor to minimize t
This combination results in more stab
 
The wide operating voltage fro
.  V
consumption make this device especi
 
The output signal is open-drain type.
a pull-up resistor tied between a pull-
 
10 Unique Features 
 
The US2881 exhibits bipolar magneti
north poles.
 
 
 
 
 
 
 
 
 
 
 
 
 
Latch characteristic
 
Depending on the magnetic switchi
and B
RP
strictly positive) or negative
and low by only using one magnetic
 
 
 
 
 
 
 
 
 
 
 
 
 
Unipolar positive switch charact
 
In latch, positive or negative switch
a minimal value. This hysteresis prev
Bipolar Hall Switch  Very Hi
f 1
ption 
logy, Melexis US2881 is a Hall-effect device with ve
n   s, weak magnets or larger air gap.
switched capacitor technique to suppress the offset
MOS technology makes this advanced technique
wer current consumption than bipolar technology. T
e effect of physical stress.
e magnetic characteristics and enables faster and
 to 24V, L and E operating temperature range an
lly suitable for automotive and BLDC motor applic
uch output allows simple connectivity with TTL or
p voltage and the device output.
 switching characteristics. Therefore, it operates wi
Typically, the device behaves as a latch with
operating and release switching points (B
OP
=
magnetic fields with equivalent strength and
drive the output high and low.
 
Removing the magnetic field (B?) keeps th
previous state. This latching property defines
magnetic memory.
 points, the device may also behave as a unipol  r
witch (B
OP
and B
RP
strictly negative). That is the o
ole. In such case, removing the magnetic field chan
istic
Unipolar negative switch c
haviour, a magnetic hysteresis B
HYST
keeps B
OP
a
n   output oscillation near the switching point.
1
gh Sensitivi
Mar/12
y high magnetic
generally observed
ssible and
 small chip size is
ore precise design.
 low current
tions.
MOS logic by using
 both south and
ymmetric
RP
|). This means
pposite direction
 output in its
the device as a
 positive switch (B
OP
put can be set high
es the output level.
acteristic
 B
RP
separated by
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