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參數(shù)資料
| 型號： | URSF05G49-3P |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA THYRISTOR SILICON PLANAR TYPE |
| 中文描述： | 東芝硅平面型晶閘管 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 253K |
| 代理商： | URSF05G49-3P |
URSF05G49-1P,URSF05G49-3P,URSF05G49-5P
2001-07-11
1
EQUIVALENT CIRCUIT
TOSHIBA THYRISTOR SILICON PLANAR TYPE
URSF05G49-1P,URSF05G49-3P,URSF05G49-5P
LOW POWER SWITCHING AND CONTROL
APPLICATIONS
Repetitive Peak Off
State Voltage V
DRM
= 400V
Repetitive Peak Reverse Voltage : V
RRM
= 400V
Average On
State Current
Reduce a Quantity of Parts and Manufacturing
Process Because of Built
in RGK : R
GK
=
1
k
, 2.7k
, 5.
1
k
(Typ.)
MAXIMUM RATINGS
: I
T (AV)
= 500mA
CHARACTERISTIC
SYMBOL
RATINGS
UNIT
Repetitive Peak Off
State Voltage
and Repetitive Peak Reverse Voltage
V
DRM
V
RRM
400
V
Non
Repetitive Peak Reverse
Voltage (Non
Repetitive<5ms,
Tj = 0~125°C)
V
RSM
500
V
Average On
State Current
(Half Sine Waveform)
I
T
(AV)
500
mA
R.M.S On
State Current
I
T
(RMS)
800
mA
9 (50Hz)
Peak One Cycle Surge On
State
Current (Non
Repetitive)
I
TSM
10 (60Hz)
A
I
2
t Limit Value
I
2
t
0.4
A
2
s
Critical Rate of Rise of On
State
Current
(Note 1)
di / dt
10
A / μs
Peak Gate Power Dissipation
P
GM
0.1
W
Average Gate Power Dissipation
P
G(AV)
0.01
W
Peak Forward Gate Voltage
V
FGM
3.5
V
Peak Reverse Gate Voltage
V
RGM
5
V
Peak Forward Gate Current
I
GM
125
mA
Junction Temperature
T
j
40~125
°C
Storage Temperature Range
T
stg
40~125
°C
Unit: mm
JEDEC
JEITA
TOSHIBA
Weight: 0.2 g
―
―
13
5B1A
NOTE 1: di / dt Test condition
i
G
= 5mA, t
gw
=10μs,
t
gr
≤
250ns
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