參數(shù)資料
型號(hào)： UPGA350A
廠商： MICROSEMI CORP-LOWELL
元件分類(lèi)： 晶閘管
英文描述： 60 V, SCR
封裝： PLASTIC, POWERMITE-3
文件頁(yè)數(shù)： 2/4頁(yè)
文件大小： 209K
代理商： UPGA350A
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Microsemi
580 Pleasant Street, Watertown, MA. 02472-2408, 617-926-0404, Fax: 617-924-1235
Page 2
Copyright
2001
Rev. 0.02, 2001-02-15
WWW
.M
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.COM
UPGA350A
Nanosecond SCR SWITCH
PRODUCT PREVIEW
WA TER T O WN D I V I SIO N
Note 1: Pulse Test intended to guarantee reverse anode voltage capability for pulse commutation
.
SPICE MODEL
.subckt SCR anode gate cathode PARAMS:
* Powermite 3 UPGA350A high-speed thyristor
+Vdrm= 60V
Vrrm=30V
Idrm=1A
Ih=5mA
+dvdt=7E5V/s
Igt=200A
Vgt=.75V
Vtm=1.5V
+Itm=2A
ton=55ns
toff=500ns
.END
ELEC TRICA L PARA MET E RS @ 2 5 ° C (u nl es s oth e r w i s e sp ec ifi e d )
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Units
On characteristics (up to 100 A w/ 100 ns pulse @ Duty Cycle = 0.0001% or less)
Forward Blocking Current
IDRM
VDRM = 50V, RGK = 1k
100
nA
On - State Voltage
VT
IT = 1A, Ig =10mA
1.1
1.5
V
Gate Trigger Voltage
VGT
VD = 5V, RGS = 100
0.5
0.75
V
Gate Trigger Current
IGT
VD = 5V, RGS = 10k
2
20
A
Reverse Gate Current
IGR
VGR = 5V
0.01
0.1
mA
Holding Current
IH
VD = 5V, RGK = 1k
0.3
1.0
2.5
mA
Reverse Current (note 1)
IRRM
VRRM = 30V, RGK = 1k
1
10
mA
Switching characteristics (Tc = 25
°C)
Delay Time
Td
Ig = 20 mA, IT = 1A
20
30
ns
Rise Time
tr
VD = 50V, IT = 1A, Ig =10mA
DC < 1%
15
25
ns
Circuit Commutated Turn—off
Time
tq
IT = IR = 1A, RGK = 1k
0.3
0.5
s
Gate Trigger—on Pulse Width
tpg(on)
Ig = 10mA, IT = 1A
20
50
ns
Critical Rate of Rise
Off –State Voltage
dv/dt
VD = 30V, RGK = 1k
15
30
V/
s
PRODUCT PRELIMINARY DATA – Information contained in this document is pre-production
data, and is proprietary to Microsemi Corp. It may not be modified in any way without the express
written consent of Microsemi Corp. Product referred to herein is not guaranteed to achieve
preliminary or production status and product specifications, configurations, and availability may
change at any time.
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