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參數(shù)資料
| 型號： | UPF1N100 |
| 廠商： | MICROSEMI CORP-LOWELL |
| 元件分類： | JFETs |
| 英文描述： | SURFACE MOUNT N . CHANNEL MOSFET |
| 中文描述： | 1 A, 1000 V, 13.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 58K |
| 代理商： | UPF1N100 |
MSC 04-28-00
PRELIMINARY
UPF1N100
Features
Rugged POWERMITE 3
Surface Mount Package
Low On-State Resistance
Avalanche and Surge Rated
High Frequency Switching
Ultra Low Leakage current
UIS rated
Available with Lot Acceptance Testing
Description
This device is an N-Channel enhancement mode, high density MOSFET.
It is passivated with 4 um (40 kA) of oxynitride, and supplied in a three
leaded package.
Maximum Ratings
PARAMETER SYMBOL
VALUE UNIT
Drain-to-Source Voltage V
DSS
1000
Volts
Gate-
to
-Source Voltage
V
GS
+/- 20
Volts
Continuous Drain Current @ TC
= 25
°
C I
D1
1.0 Amps
Continuous Drain Current @ TC=100
°
C I
D2
0.27
Amps
Avalanche Current I
AR
1.0 Amps
Repetitive Avalanche Energy E
AR
3.5 mJ
Single Pulse Avalanche Energy E
AS
120
mJ
Operating & Storage Junction Temperature Range T
J
, T
STG
- 40 to +125
°
C
Steady-state Thermal Resistance, Junction-to-Tab R
θ
J-TAB
2.5
°
C/Watt
Static Electrical Characteristics
SYMBOL
BV
DSS
V
GS(TH)2
V
GS(TH)1
R
DS(ON)1
R
DS(ON)2
R
DS(ON)3
R
DS(ON)4
R
DS(ON)5
I
DSS1
I
DSS2
I
GSS1
I
GSS2
I
GSS3
CHARACTERISTICS / TEST CONDITIONS
Drain to Source Breakdown Voltage (VGS=0V, ID=0.25mA)
Gate Threshold Voltage (VGS=VDS, ID=1mA, TJ=37
°
C
)
Gate Threshold Voltage (VGS=VDS, ID=1mA, TJ=25
°
C
)
Drain to Source ON-State Resistance (VGS=10V, ID=ID
1
, TJ=25
°
C
)
Drain to Source ON-State Resistance (VGS=7V,
ID=5…150ma,
TJ=37
°
C)
Drain to Source ON-State Resistance (VGS=7V,
ID=5…150ma,
TJ=25
°
C)
Drain to Source ON-State Resistance (VGS=7V,
ID=5…150ma,
TJ=60
°
C)
Drain to Source ON-State Resistance
(VGS=7V,
ID=ID
1
, TJ=125
°
C
)
Zero Gate Voltage-Drain Current
(VDS=80%BVDSS,VGS=0V,TJ=
25
°
C
)
Zero Gate Voltage-Drain Current
(VDS=80%BVDSS,VGS=0V,TJ=125
°
C
)
Gate to Source Leakage Current
(VGS=
±
20V, VDS=0V,
TJ =
25
°
C
)
Gate to Source Leakage Current
(VGS=
±
20V, VDS=0V, TJ =
37
°
C
)
Gate to Source Leakage Current
(VGS=
±
20V, VDS=0V, TJ=125
°
C
)
MIN
1000
TYP
MAX
UNIT
Volts
Volts
Volts
Ohms
Ohms
Ohms
Ohms
Ohms
uA
uA
nA
nA
uA
3.4
3.5
12.5
12.5
11.5
15.0
25.5
2
4.5
13.5
25
250
±
100
10.0
25
580 Pleasant Street
Watertown, MA 02472
Phone:(617) 926-0404
F A X : (617) 924-1235
SURFACE MOUNT
N – CHANNEL
MOSFET
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