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參數(shù)資料
| 型號： | UPD4632312AF9-BE75X-BC2 |
| 廠商： | NEC Corp. |
| 英文描述： | 32M-BIT CMOS MOBILE SPECIFIED RAM 2M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION |
| 中文描述： | 32兆位CMOS移動指明內(nèi)存200萬字由16位溫度范圍 |
| 文件頁數(shù)： | 1/36頁 |
| 文件大?。?/td> | 320K |
| 代理商： | UPD4632312AF9-BE75X-BC2 |
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The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with NEC Electronics sales
representative for availability and additional information.
Document No. M15874EJ5V0DS00 (5th edition)
Date Published January 2003 NS CP (K)
Printed in Japan
MOS INTEGRATED CIRCUIT
μ
PD4632312A-X
32M-BIT CMOS MOBILE SPECIFIED RAM
2M-WORD BY 16-BIT
EXTENDED TEMPERATURE OPERATION
PRELIMINARY DATA SHEET
The mark
#
shows major revised points.
2001
Description
The
μ
PD4632312A-X is a high speed, low power, 33,554,432 bits (2,097,152 words by 16 bits) CMOS Mobile
Specified RAM featuring Low Power Static RAM compatible function and pin configuration.
The
μ
PD4632312A-X is fabricated with advanced CMOS technology using one-transistor memory cell.
The
μ
PD4632312A-X is packed in 48-pin TAPE FBGA.
Features
2,097,152 words by 16 bits organization
Fast access time: 60, 65, 75, 85 ns (MAX.)
Fast page access time: 18, 25, 30 ns (MAX.)
Byte data control: /LB (I/O0 to I/O7), /UB (I/O8 to I/O15)
Low voltage operation:2.7 to 3.1 V (-B60X, -B65X)
2.7 to 3.1 V (Chip), 1.65 to 2.1 V (I/O) (-BE75X, -BE85X)
Operating ambient temperature: T
A
= –25 to +85 °C
Output Enable input for easy application
Chip Enable input: /CS pin
Standby Mode input: MODE pin
Standby Mode1: Normal standby (Memory cell data hold valid)
Standby Mode2: Density of memory cell data hold is variable
μ
PD4632312A
Access
Operating supply
Operating
Supply current
time
voltage
ambient
At operating
At standby
μ
A (MAX.)
ns (MAX.)
V
temperature mA (MAX.)
Density of data hold
Chip
I/O
°C
32M bits 16M bits 8M bits 4M bits
0M bit
-B60X
Note
, -B65X
60, 65
2.7 to 3.1
–
–25 to +85
50
100
70
60
50
30
-BE75X
Note
, -BE85X
Note
75, 85
2.7 to 3.1 1.65 to 2.1
45
Note
Under development
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| UPD4632312A-X | 32M-BIT CMOS MOBILE SPECIFIED RAM 2M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION |
| UPD4632312AF9-B65X-BC2 | 32M-BIT CMOS MOBILE SPECIFIED RAM 2M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION |
| UPD4632312AF9-BE85X-BC2 | 32M-BIT CMOS MOBILE SPECIFIED RAM 2M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION |
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