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參數(shù)資料
| 型號： | UPD46259LA-7 |
| 英文描述： | x9 SRAM |
| 中文描述： | X9熱賣靜態(tài)存儲器 |
| 文件頁數(shù)： | 1/32頁 |
| 文件大?。?/td> | 209K |
| 代理商： | UPD46259LA-7 |
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2000
Document No. M15085EJ4V0DS00
Date Published July 2001 NS CP (K)
Printed in Japan
MOS INTEGRATED CIRCUIT
μ
PD4616112
16M-BIT CMOS MOBILE SPECIFIED RAM
1M-WORD BY 16-BIT
DATA SHEET
The mark
#
shows major revised points.
Description
The
μ
PD4616112 is a high speed, low power, 16,777,216 bits (1,048,576 words by 16 bits) CMOS mobile specified
RAM featuring low power static RAM compatible function and pin configuration.
The
μ
PD4616112 is fabricated with advanced CMOS technology using one-transistor memory cell.
The
μ
PD4616112 is packed in 48-pin TAPE FBGA.
Features
1,048,576 words by 16 bits organization
Fast access time: 80, 90, 100 ns (MAX.)
Byte data control: /LB (I/O1 - I/O8), /UB (I/O9 - I/O16)
Low voltage operation: V
CC
= 2.6 to 3.0 V
Operating ambient temperature: T
A
= –20 to +70 °C
Output Enable input for easy application
Chip Enable input: /CS pin
Standby Mode input: MODE pin
Standby Mode1: Normal standby (Memory cell data hold valid)
Standby Mode2: Memory cell data hold invalid
Product name
Access time
Operating supply Operating ambient
Supply current
ns (MAX.)
Voltage
temperature
At operating
At standby
°C
mA (MAX.)
μ
A (MAX.)
μ
PD4616112-BCxx
80, 90, 100
2.6 to 3.0
–20 to +70
35
100 / 10
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