參數(shù)資料
型號(hào)： UPD4564323G5-A70-9JH
廠商： NEC Corp.
英文描述： 64M-bit Synchronous DRAM 4-bank, LVTTL
中文描述： 6400位同步DRAM 4銀行，LVTTL
文件頁數(shù)： 16/84頁
文件大?。?/td> 1048K
代理商： UPD4564323G5-A70-9JH
Data Sheet M14376EJ2V0DS00
16
μ
PD4564323 for Rev.
E
(3/3)
Current state
/CS /RAS /CAS /WE
Address
Command
Action
Notes
Write recovering
H
×
×
×
×
DESL
Nop
→
Enter row active after t
DPL
L
H
H
H
×
NOP
Nop
→
Enter row active after t
DPL
L
H
H
L
×
BST
Nop
→
Enter row active after t
DPL
L
H
L
H
BA, CA, A10
READ/READA
Start read, Determine AP
8
L
H
L
L
BA, CA, A10
WRIT/WRITA
New write, Determine AP
L
L
H
H
BA, RA
ACT
ILLEGAL
3
L
L
H
L
BA, A10
PRE/PALL
ILLEGAL
3
L
L
L
H
×
REF/SELF
ILLEGAL
L
L
L
L
Op-Code
MRS
ILLEGAL
Write recovering
H
×
×
×
×
DESL
Nop
→
Enter precharge after t
DPL
with auto precharge
L
H
H
H
×
NOP
Nop
→
Enter precharge after t
DPL
L
H
H
L
×
BST
Nop
→
Enter precharge after t
DPL
L
H
L
H
BA, CA, A10
READ/READA
ILLEGAL
3, 8
L
H
L
L
BA, CA, A10
WRIT/WRITA
ILLEGAL
3
L
L
H
H
BA, RA
ACT
ILLEGAL
3
L
L
H
L
BA, A10
PRE/PALL
ILLEGAL
L
L
L
H
×
REF/SELF
ILLEGAL
L
L
L
L
Op-Code
MRS
ILLEGAL
Refreshing
H
×
×
×
×
DESL
Nop
→
Enter idle after t
RC
L
H
H
×
×
NOP/BST
Nop
→
Enter idle after t
RC
L
H
L
×
×
READ/WRIT
ILLEGAL
L
L
H
×
×
ACT/PRE/PALL
ILLEGAL
L
L
L
×
×
REF/SELF/MRS
ILLEGAL
Mode register
H
×
×
×
×
DESL
Nop
→
Enter idle after t
RSC
accessing
L
H
H
H
×
NOP
Nop
→
Enter idle after t
RSC
L
H
H
L
×
BST
ILLEGAL
L
H
L
×
×
READ/WRIT
ILLEGAL
L
L
×
×
×
ACT/PRE/PALL/
REF/SELF/MRS
ILLEGAL
Notes 1.
All entries assume that CKE was active (High level) during the preceding clock cycle.
If all banks are idle, and CKE is inactive (Low level),
μ
PD4564323 will enter Power down mode.
All input buffers except CKE will be disabled.
Illegal to bank in specified states; Function may be legal in the bank indicated by Bank Address (BA),
depending on the state of that bank.
If all banks are idle, and CKE is inactive (Low level),
μ
PD4564323 will enter Self refresh mode. All input
buffers except CKE will be disabled.
Illegal if t
RCD
is not satisfied.
Illegal if t
RAS
is not satisfied.
Must satisfy burst interrupt condition.
Must satisfy bus contention, bus turn around, and/or write recovery requirements.
Must mask preceding data which don't satisfy t
DPL
.
Illegal if t
RRD
is not satisfied.
2.
3.
4.
5.
6.
7.
8.
9.
10.
Remark
H = High level, L = Low level,
×
= High or Low level (Don’t care), V = Valid data
相關(guān)PDF資料
PDF描述
UPD46128512-E10X 128M-BIT CMOS MOBILE SPECIFIED RAM 8M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION
UPD46128512-E11X 128M-BIT CMOS MOBILE SPECIFIED RAM 8M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION
UPD46128512-E12X 128M-BIT CMOS MOBILE SPECIFIED RAM 8M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION
UPD46128512-E9X 128M-BIT CMOS MOBILE SPECIFIED RAM 8M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION
UPD46128512-X 128M-BIT CMOS MOBILE SPECIFIED RAM 8M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
UPD45D128442G5C759LG 制造商:NEC 功能描述:*
UPD4701AC-A 制造商:Renesas Electronics 功能描述:Cut Tape
UPD4702C-A 制造商:Renesas Electronics 功能描述:Cut Tape
UPD4702G-A 制造商:Renesas Electronics 功能描述:Cut Tape
uPD4704C(A) 制造商:Renesas Electronics 功能描述:Cut Tape
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*