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    參數(shù)資料
    型號(hào)： UPD44164184F5-E40-EQ1
    廠商： NEC Corp.
    英文描述： 18M-BIT DDRII SRAM 4-WORD BURST OPERATION
    中文描述： 1800萬(wàn)位的SRAM 4條DDRII字爆發(fā)運(yùn)作
    文件頁(yè)數(shù)： 10/32頁(yè)
    文件大小： 394K
    代理商： UPD44164184F5-E40-EQ1
    10
    Data Sheet M15822EJ7V
    1
    DS
    μ
    PD44164084, 44164184, 44164364
    Bus Cycle State Diagram
    READ DOUBLE
    Count = Count + 2
    WRITE DOUBLE
    Count = Count + 2
    Power UP
    Write
    NOP
    Supply voltage provided
    LOAD NEW
    ADDRESS
    Count = 0
    NOP
    ADVANCE ADDRESS
    BY TWO
    ADVANCE ADDRESS
    BY TWO
    Load, Count = 4
    Read
    Load, Count = 4
    Always
    Count = 2
    Always
    Count = 2
    Load
    NOP,
    Count = 4
    NOP,
    Count = 4
    Remarks 1.
    A0 and A1 are internally advanced in accordance with the burst order table.
    Bus cycle is terminated after burst count = 4.
    2.
    State transitions: L = (/LD = LOW); /L = (/LD = HIGH); R = (/R, W = HIGH); W = (/R, W = LOW).
    3.
    State machine control timing sequence is controlled by K.
    相關(guān)PDF資料
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    相關(guān)代理商/技術(shù)參數(shù)
    參數(shù)描述
    UPD44164362F5-E60-EQ1ES 制造商:NEC Electronics Corporation 功能描述:
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    UPD44165362BF5-E40-EQ3 制造商:Renesas Electronics Corporation 功能描述:UPD44165362BF5-E40-EQ3 - Trays
    UPD44165362BF5-E40-EQ3-A 制造商:Renesas Electronics Corporation 功能描述:SRAM Chip Sync Dual 1.8V 18M-Bit 512K x 36 0.45ns 165-Pin BGA
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