參數(shù)資料
型號(hào): UPD43256BGU-70L
廠商: NEC Corp.
英文描述: 256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT
中文描述: 256K位CMOS靜態(tài)RAM 32K的詞8位
文件頁(yè)數(shù): 12/24頁(yè)
文件大小: 174K
代理商: UPD43256BGU-70L
12
μ
PD43256B
Write Cycle (1/2)
V
CC
4.5 V
μ
PD43256B-85
μ
PD43256B-A85/A10/A12
μ
PD43256B-B10/B12/B15
Parameter
Symbol
μ
PD43256B-70
Unit
Condition
MIN.
MAX.
MIN.
MAX.
Write cycle time
t
WC
70
85
ns
CS to end of write
t
CW
50
70
ns
Address valid to end of write
t
AW
50
70
ns
Write pulse width
t
WP
55
60
ns
Data valid to end of write
t
DW
30
35
ns
Data hold time
t
DH
0
0
ns
Address setup time
t
AS
0
0
ns
Write recovery time
t
WR
0
0
ns
WE to output in high impedance
t
WHZ
30
30
ns
Note
Output active from end of write
t
OW
10
10
ns
Note
See the output load shown in
Figure 2
except for
μ
PD43256B-A, 43256B-B.
Remark
These AC characteristics are in common regardless of package types and L, LL versions.
Write Cycle (2/2)
V
CC
3.0 V
V
CC
2.7 V
Parameter
Symbol
μ
PD43256B-A85
μ
PD43256B-A10
μ
PD43256B-A12
μ
PD43256B-B10
μ
PD43256B-B12
μ
PD43256B-B15
Unit
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
Write cycle time
t
WC
85
100
120
100
120
150
ns
CS to end of write
t
CW
70
70
90
70
90
100
ns
Address valid to end of write
t
AW
70
70
90
70
90
100
ns
Write pulse width
t
WP
60
60
80
60
80
90
ns
Data valid to end of write
t
DW
60
60
70
60
70
80
ns
Data hold time
t
DH
0
0
0
0
0
0
ns
Address setup time
t
AS
0
0
0
0
0
0
ns
Write recovery time
t
WR
0
0
0
0
0
0
ns
WE to output in high impedance
t
WHZ
30
35
40
35
40
50
ns
Note
Output active from end of write
t
OW
10
10
10
10
10
10
ns
Note
Loading condition is 1TTL + 100 pF.
Remark
These AC characteristics are in common regardless of package types and L, LL versions.
Con-
dition
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參數(shù)描述
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UPD43256BGU-85L(A) 制造商:Renesas Electronics Corporation 功能描述:
UPD43256BGU-A85-A 制造商:Renesas Electronics 功能描述:85ns 制造商:Renesas Electronics 功能描述:85ns Cut Tape