參數(shù)資料
型號(hào)： UPC8151TA
元件分類： 放大器
英文描述： 100 MHz - 1900 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
封裝： MINIMOLD, 6 PIN
文件頁數(shù)： 1/52頁
文件大?。?/td> 266K
代理商： UPC8151TA
Caution Electro-static sensitive devices
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
BIPOLAR ANALOG INTEGRATED CIRCUITS
PC8128TA, PC8151TA, PC8152TA
SILICON MMIC LOW CURRENT AMPLIFIERS
FOR CELLULAR/CORDLESS TELEPHONES
Document No. P14637EJ2V0DS00 (2nd edition)
Date Published August 2000 N CP(K)
Printed in Japan
DATA SHEET
2000
The mark
shows major revised points.
DESCRIPTION
The
PC8128TA, PC8151TA and PC8152TA are silicon monolithic integrated circuits designed as buffer
amplifiers for cellular / cordless telephones. These amplifiers can realize low current consumption with external chip
inductor (example: 1005 size) which can not be realized on internal 50
wideband matched IC. These low current
amplifiers operate on 3.0 V.
These ICs are manufactured using NEC’s 20 GHz fT NESAT III silicon bipolar process. This process uses
silicon nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution
and prevent corrosion/migration. Thus, these ICs have excellent performance, uniformity and reliability.
FEATURES
Low current consumption
:
PC8128TA
; ICC = 2.8 mA TYP. @ VCC = 3.0 V
PC8151TA
; ICC = 4.2 mA TYP. @ VCC = 3.0 V
PC8152TA
; ICC = 5.6 mA TYP. @ VCC = 3.0 V
Supply voltage
: VCC = 2.4 to 3.3 V
High efficiency
:
PC8128TA
; PO (1 dB) =
4.0 dBm TYP. @ f = 1 GHz
PC8151TA
; PO (1 dB) = +2.5 dBm TYP. @ f = 1 GHz
PC8152TA
; PO (1 dB) =
4.5 dBm TYP. @ f = 1 GHz
Power gain variation
:
PC8128TA, 8151TA ; GP = 12.5 dB TYP. @ f = 1 GHz
PC8152TA
; GP = 23.0 dB TYP. @ f = 1 GHz
Operating frequency
: 100 to 1 900 MHz (Output port LC matching)
Excellent isolation
:
PC8128TA
; ISL = 39 dB TYP. @ f = 1 GHz
:
PC8151TA
; ISL = 38 dB TYP. @ f = 1 GHz
:
PC8152TA
; ISL = 40 dB TYP. @ f = 1 GHz
APPLICATION
Buffer Amplifiers on 800 to 1 900 MHz cellular / cordless telephones
相關(guān)PDF資料
PDF描述
UPCI-39 1 ELEMENT, 39000 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
UPCI-33 1 ELEMENT, 33000 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
UPCI-27 1 ELEMENT, 27000 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
UPCI-10000 1 ELEMENT, 10000000 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
UPCI-1800 1 ELEMENT, 1800000 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
UPC8151TA-E3 制造商:NEC 制造商全稱:NEC 功能描述:SILICON MMIC LOW CURRENT AMPLIFIERS FOR CELLULAR/CORDLESS TELEPHONES
UPC8151TB 功能描述:射頻放大器 Lo Current Amplifier RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel
UPC8151TB-A 功能描述:射頻放大器 Lo Current Amplifier RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel
UPC8151TB-E3 功能描述:射頻放大器 Lo Current Amplifier RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel
UPC8151TB-E3-A 功能描述:射頻放大器 Lo Current Amplifier RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel
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