參數(shù)資料
型號: UPC2708T-E3
廠商: NEC Corp.
英文描述: 3 GHz SILICON MMIC WIDE-BAND AMPLIFIER
中文描述: 3千兆赫硅單片寬帶放大器
文件頁數(shù): 1/6頁
文件大?。?/td> 140K
代理商: UPC2708T-E3
PART NUMBER
PACKAGE OUTLINE
UPC2708T
T06
UPC2711T
T06
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
MIN
TYP
MAX
I
CC
Circuit Current (no signal)
mA
20
26
33
9
12
15
G
S
Small Signal Gain
dB
13
15
18.5
11
13
16.5
f
U
Upper Limit Operating Frequency
(The gain at f
U
is 3 dB down from the gain at 0.1 GHz)
GHz
2.7
2.9
2.7
2.9
G
S
Gain Flatness, f = 0.1 - 2.6 GHz
f = 0.1 - 2.5 GHz
dB
±
0.8
±
0.8
P
SAT
Saturated Output Power
dBm
7.5
10
-2
1
P
1dB
Output Power at 1 dB Compression Point
dBm
7.5
-4
NF
Noise Figure
dB
6.5
8
5
6.5
RL
IN
Input Return Loss
dB
8
11
20
25
RL
OUT
Output Return Loss
dB
16
20
9
12
ISOL
Isolation
dB
18
23
25
30
G
T
Gain-Temperature Coefficient
dB/
°
C
°
C/W
+0.002
-0.002
R
TH
Thermal Resistance (Junction to Ambient)
200
200
The UPC2708T and UPC2711T are Silicon Monolithic inte-
grated circuits manufactured using the NESAT III process.
These devices are suitable as buffer amplifiers for wide-band
applications. They are designed for low cost gain stages in
cellular radios, GPS receivers, DBS tuners, PCN, and test/
measurement equipment.
NEC's stringent quality assurance and test procedures en-
sure the highest reliability and performance.
DESCRIPTION
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C, f = 1 GHz, V
CC
= 5 V)
UPC2708T
UPC2711T
3 GHz SILICON MMIC
WIDE-BAND AMPLIFIER
FEATURES
WIDE FREQUENCY RESPONSE:
3 GHz
HIGH GAIN:
15 dB (UPC2708T)
SATURATED OUTPUT POWER:
+10 dBm (UPC2708T)
INTERNAL CURRENT REGULATION MINIMIZES GAIN
CHANGE OVER TEMPERATURE
5 V SINGLE SUPPLY VOLTAGE
SUPER SMALL PACKAGE
TAPE AND REEL PACKAGING OPTION AVAILABLE
0 0.5 1.0 1.5 2.0 2.5 3.0
Frequency, f (GHz)
20
15
10
5
0
UPC2708
UPC2711
G
S
GAIN vs. FREQUENCY
California Eastern Laboratories
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