
DATA SHEET
Caution Electro-static sensitive devices.
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BIPOLAR ANALOG INTEGRATED CIRCUIT
μ
PC1679G
5 V-BIAS, +15.5 dBm OUTPUT, 1.8 GHz WIDEBAND
Si MMIC AMPLIFIER
Document No. P12434EJ4V0DS00 (4th edition)
Date Published September 1999 N CP(K)
Printed in Japan
1994, 1999
The mark
shows major revision points.
DESCRIPTION
The
μ
PC1679G is a silicon monolithic integrated circuit designed as medium output power amplifier for high
frequency system applications. Due to +13 dBm TYP. output at 1 GHz, this IC is recommendable for transmitter
stage amplifier of L Band wireless communication systems. This IC is packaged in 8-pin plastic SOP.
This IC is manufactured using NEC’s 20 GHz f
T
NESAT
nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution and
prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability.
TM
IV silicon bipolar process. This process uses silicon
FEATURES
Supply voltage
Saturated output power
Wideband response
Isolation
Power Gain
: V
CC
= 4.5 to 5.5 V
: P
O(sat)
= +15.5 dBm TYP. @ f = 500 MHz with external inductor
: f
u
= 1.8 GHz TYP. @ 3 dB bandwidth
: ISL = 34 dB TYP. @ f = 500 MHz
: G
P
= 21.5 dB TYP. @ f = 500 MHz
ORDERING INFORMATION
Part Number
Package
Marking
Supplying Form
μ
PC1679G-E1
Embossed tape 12 mm wide.
1 pin is tape pull-out direction.
Qty 2.5 kp/reel.
μ
PC1679G-E2
8-pin plastic SOP (225 mil)
1679
Embossed tape 12 mm wide.
1 pin is tape roll-in direction.
Qty 2.5 kp/reel.
Remark
To order evaluation samples, please contact your local NEC sales office.
(Part number for sample order:
μ
PC1679G)