參數(shù)資料
型號(hào)： UPA848TD
英文描述： TRANSISTOR | BJT | PAIR | NPN | 3.3V V(BR)CEO | 35MA I(C) | SOT-363VAR
中文描述： 晶體管|晶體管|一對(duì)|叩| 3.3VV（巴西）總裁| 35MA一（c）|的SOT - 363VAR
文件頁(yè)數(shù)： 2/36頁(yè)
文件大?。?/td> 168K
代理商： UPA848TD
Data Sheet P15201EJ1V0DS
2
μ
PA841TC
ABSOLUTE MAXIMUM RATINGS (T
A
= +25
°
C)
Parameter
Symbol
Ratings
Unit
Q1
Q2
Collector to Base Voltage
V
CBO
9
9
V
Collector to Emitter Voltage
V
CEO
6
5.5
V
Emitter to Base Voltage
V
EBO
2
1.5
V
Collector Current
I
C
30
100
mA
Total Power Dissipation
P
tot
Note
180
200
mW
230 in 2 elements
Junction Temperature
T
j
150
°
C
Storage Temperature
T
stg
65 to +150
°
C
Note
Mounted on 1.08 cm
2
×
1.0 mm (t) glass epoxy substrate
ELECTRICAL CHARACTERISTICS (T
A
= +25
°
C)
(1) Q1
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Collector Cut-off Current
I
CBO
V
CB
= 5 V, I
E
= 0 mA
100
nA
Emitter Cut-off Current
I
EBO
V
BE
= 1 V, I
C
= 0 mA
100
nA
DC Current Gain
h
FE
Note 1
V
CE
= 3 V, I
C
= 10 mA
75
150
Gain Bandwidth Product
f
T
V
CE
= 3 V, I
C
= 10 mA, f = 2 GHz
10.0
12.0
GHz
Insertion Power Gain
S
21e
2
V
CE
= 3 V, I
C
= 10 mA, f = 2 GHz
7.0
8.5
dB
Noise Figure
NF
V
CE
= 3 V, I
C
= 3 mA, f = 2 GHz,
Z
S
= Z
opt
1.5
2.5
dB
Reverse Transfer Capacitance
C
re
Note 2
V
CB
= 3 V, I
E
= 0 mA, f = 1 MHz
0.4
0.7
pF
(2) Q2
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Collector Cut-off Current
I
CBO
V
CB
= 5 V, I
E
= 0 mA
600
nA
Emitter Cut-off Current
I
EBO
V
BE
= 1 V, I
C
= 0 mA
600
nA
DC Current Gain
h
FE
Note 1
V
CE
= 1 V, I
C
= 5 mA
100
160
Gain Bandwidth Product (1)
f
T
V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz
3.5
5.0
GHz
Gain Bandwidth Product (2)
f
T
V
CE
= 1 V, I
C
= 15 mA, f = 2 GHz
5.5
6.5
GHz
Insertion Power Gain (1)
S
21e
2
V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz
3.5
4.0
dB
Insertion Power Gain (2)
S
21e
2
V
CE
= 1 V, I
C
= 15 mA, f = 2 GHz
4.5
5.5
dB
Noise Figure
NF
V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz,
Z
S
= Z
opt
1.5
2.5
dB
Reverse Transfer Capacitance
C
re
Note 2
V
CB
= 0.5 V, I
E
= 0 mA, f = 1 MHz
0.8
1.0
pF
Notes 1.
Pulse measurement: PW
≤
350
μ
s, Duty Cycle
≤
2%
2.
Collector to base capacitance measured using capacitance meter (self-balancing bridge method) when
the emitter is connected to the guard pin
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