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參數(shù)資料
| 型號： | UPA839TF-T1 |
| 廠商： | NEC Corp. |
| 英文描述： | NPN SILICON EPITAXIAL TWIN TRANSISTOR |
| 中文描述： | NPN硅外延雙晶體管 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 17K |
| 代理商： | UPA839TF-T1 |
UPA839TF
NPN SILICON EPITAXIAL
TWIN TRANSISTOR
PRELIMINARY DATA SHEET
California Eastern Laboratories
SMALL PACKAGE OUTLINE:
SOT-363 package measures just 2.0 mm x 1.25 mm
LOW HEIGHT PROFILE:
Just 0.60 mm high
TWO DIFFERENT DIE TYPES:
Q1 - Ideal oscillator transistor
Q2 - Ideal buffer amplifier transistor
FEATURES
DESCRIPTION
The UPA839TF contains one NE680 and one NE856 NPN high
frequency silicon bipolar chip. NEC's new low profile TF
package is ideal for all portable wireless applications where
reducing component height is a prime consideration. Each
transistor chip is independently mounted and easily configured
for oscillator/buffer amplifier and other applications.
OUTLINE DIMENSIONS
(Units in mm)
Package Outline TS06
2.1
±
0.1
1.25
±
0.1
0 ~ 0.1
0.13
±
0.05
0.6
±
0.1
2.0
±
0.2
0.65
1.3
1
2
3
4
5
6
0.22
(All Leads)
+0.10
0.45
Q1
Q2
PIN CONNECTIONS
1. Collector (Q1)
2. Emitter (Q1)
3. Collector (Q2)
4. Base (Q2)
5. Emitter (Q2)
6. Base (Q1)
Notes: 1. Pulsed measurement, pulse width
≤
350
μ
s, duty cycle
≤
2 %.
2. Collector to base capacitance when measured with capacitance meter (automatic balanced bridge method), with
emitter connected to guard pin of capacitances meter.
PART NUMBER
PACKAGE OUTLINE
UPA839TF
TS06
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
I
CBO
I
EBO
h
FE
f
T
Cre
|S
21E
|
2
NF
Collector Cutoff Current at V
CB
= 10 V, I
E
= 0
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
DC Current Gain
1
at V
CE
= 3 V, I
C
= 5 mA
Gain Bandwidth at V
CE
= 3 V, I
C
= 5 mA
Feedback Capacitance
2
at V
CB
= 3 V, I
E
= 0, f = 1 MHz
Insertion Power Gain at V
CE
= 3 V, I
C
=5 mA, f = 2 GHz
Noise Figure at V
CE
= 3 V, I
C
= 5 mA, f = 2 GHz
μ
A
μ
A
1.0
1.0
200
80
5.5
120
8.0
0.3
7.5
1.9
GHz
pF
dB
dB
0.7
5.5
3.2
I
CBO
I
EBO
h
FE
f
T
Cre
|S
21E
|
2
NF
Collector Cutoff Current at V
CB
= 10 V, I
E
= 0
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
DC Current Gain
1
at V
CE
= 3 V, I
C
= 7 mA
Gain Bandwidth at V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
Feedback Capacitance
2
at V
CB
= 3 V, I
E
= 0, f = 1 MHz
Insertion Power Gain at V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
Noise Figure at V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
μ
A
μ
A
1.0
1.0
145
100
3.0
GHz
pF
dB
dB
4.5
0.7
9
1.2
1.5
7
2.5
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C)
Q
Q
Note: Pin 1 is the
lower left most pin as
the package lettering
is oriented and read
left to right.
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