參數(shù)資料
型號(hào): UPA832TF-T1
廠商: NEC Corp.
英文描述: NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE
中文描述: NPN硅外延晶體管,2個(gè)不同的元素,采用6引腳薄型模具迷你小包裝
文件頁數(shù): 4/12頁
文件大?。?/td> 65K
代理商: UPA832TF-T1
4
μ
PA832TF
TYPICAL CHARACTERISTICS (T
A
= 25
°
C)
200
100
0
50
100
150
Ambient temperature T
A
(
°
C)
Collector Current vs. DC Base Voltage
Total Power Dissipation vs. Ambient Temperature
Total Power Dissipation vs. Ambient Temperature
Q1
Q2
T
T
20
10
0
0.5
1.0
V
CE
= 3 V
DC base voltage
V
BE
(V)
C
C
25
20
15
10
5
0
5
10
C
C
Collector to emitter voltage V
CE
(V)
Collector Current vs. Collector to Emitter Voltage
I
B
=
160
A
140 A
120 A
100 A
80 A
40 A
20 A
60 A
μ
2 elements in total
50
200
100
0
50
100
150
40
30
20
10
0
0.5
1.0
V
CE
= 3 V
Ambient temperature T
A
(
°
C)
T
T
DC base voltage
V
BE
(V)
Collector Current vs. DC Base Voltage
C
C
Free Air
Free Air
60
40
30
10
0
2
4
6
C
C
Collector to emitter voltage V
CE
(V)
Collector Current vs. Collector to Emitter Voltage
1
3
5
500 A
50
20
400 A
300 A
200 A
I
B
= 100 A
Q1 when using
2 elements
Q1 when using
1 element
Q2 when using
2 elements
Q2 when using
1 element
2 elements in total
相關(guān)PDF資料
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