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參數(shù)資料
| 型號： | UPA831TF |
| 廠商： | NEC Corp. |
| 英文描述： | NPN SILICON EPITAXIAL TWIN TRANSISTOR |
| 中文描述： | NPN硅外延雙晶體管 |
| 文件頁數(shù)： | 5/16頁 |
| 文件大?。?/td> | 79K |
| 代理商： | UPA831TF |
Data Sheet P14554EJ1V0DS00
5
μ
PA831TC
D
F
Collector Current I
C
(mA)
Q2
D
F
Collector Current I
C
(mA)
Q1
DC CURRENT GAIN vs.
COLLECTOR CURRENT
I
S
2
2
Collector Current I
C
(mA)
INSERTION POWER GAIN vs.
COLLECTOR CURRENT
G
T
Collector Current I
C
(mA)
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
I
S
2
2
Collector Current I
C
(mA)
INSERTION POWER GAIN vs.
COLLECTOR CURRENT
G
T
Collector Current I
C
(mA)
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
DC CURRENT GAIN vs.
COLLECTOR CURRENT
10
0.1
100
1 000
1
10
100
V
CE
= 3 V
10
0.1
100
1 000
1
10
V
CE
= 3 V
0.00
1
1.00
2.00
3.00
4.00
5.00
6.00
7.00
10
100
0.00
1
1.00
2.00
3.00
4.00
5.00
6.00
8.00
10
100
V
CE
= 3 V
f = 1 GHz
V
CE
= 3 V
f = 1 GHz
7.00
2.00
4.00
6.00
8.00
10.00
12.00
14.00
1
10
100
V
CE
= 3 V
f = 1 GHz
2.00
4.00
6.00
8.00
10.00
12.00
16.00
1
10
100
14.00
V
CE
= 3 V
f = 1 GHz
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| UPA831TC-T1 | NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE |
| UPA831TF-T1 | NPN SILICON EPITAXIAL TWIN TRANSISTOR |
| UPA832 | NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE |
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相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UPA831TF-T1 | 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON EPITAXIAL TWIN TRANSISTOR |
| UPA832 | 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE |
| UPA832TF | 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE |
| UPA832TF_99 | 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON EPITAXIAL TWIN TRANSISTOR |
| UPA832TF-T1 | 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE |
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