參數資料
型號: UPA831TC
廠商: California Eastern Laboratories
英文描述: NPN SILICON EPITAXIAL TWIN TRANSISTOR
中文描述: NPN硅外延雙晶體管
文件頁數: 5/16頁
文件大?。?/td> 79K
代理商: UPA831TC
Data Sheet P14554EJ1V0DS00
5
μ
PA831TC
D
F
Collector Current I
C
(mA)
Q2
D
F
Collector Current I
C
(mA)
Q1
DC CURRENT GAIN vs.
COLLECTOR CURRENT
I
S
2
2
Collector Current I
C
(mA)
INSERTION POWER GAIN vs.
COLLECTOR CURRENT
G
T
Collector Current I
C
(mA)
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
I
S
2
2
Collector Current I
C
(mA)
INSERTION POWER GAIN vs.
COLLECTOR CURRENT
G
T
Collector Current I
C
(mA)
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
DC CURRENT GAIN vs.
COLLECTOR CURRENT
10
0.1
100
1 000
1
10
100
V
CE
= 3 V
10
0.1
100
1 000
1
10
V
CE
= 3 V
0.00
1
1.00
2.00
3.00
4.00
5.00
6.00
7.00
10
100
0.00
1
1.00
2.00
3.00
4.00
5.00
6.00
8.00
10
100
V
CE
= 3 V
f = 1 GHz
V
CE
= 3 V
f = 1 GHz
7.00
2.00
4.00
6.00
8.00
10.00
12.00
14.00
1
10
100
V
CE
= 3 V
f = 1 GHz
2.00
4.00
6.00
8.00
10.00
12.00
16.00
1
10
100
14.00
V
CE
= 3 V
f = 1 GHz
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