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參數(shù)資料
| 型號(hào)： | UPA831TC-T1 |
| 廠商： | NEC Corp. |
| 英文描述： | NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE |
| 中文描述： | NPN硅外延晶體管2不同元素在一個(gè)平面，鉛6引腳薄型包裝超超MINIMOLD |
| 文件頁(yè)數(shù)： | 4/16頁(yè) |
| 文件大?。?/td> | 79K |
| 代理商： | UPA831TC-T1 |
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Data Sheet P14554EJ1V0DS00
4
μ
PA831TC
TYPICAL CHARACTERISTICS (T
A
= +25
°
C)
T
T
Ambient Temperature T
A
(
°
C)
T
T
Ambient Temperature T
A
(
°
C)
Q1
Q2
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
C
C
Collector to Emitter Voltage V
CE
(V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
C
C
Base to Emitter Voltage V
BE
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
C
C
Collector to Emitter Voltage V
CE
(V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
C
C
Base to Emitter Voltage V
BE
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
0
0
50
100
150
100
200
230
2 Elements in total
Free Air
Free Air
Per Element
0
0
50
100
150
100
200
230
2 Elements in total
Per Element
10
20
0.5
1.0
0
0
V
CE
= 3 V
10
20
0.5
1.0
0
0
V
CE
= 3 V
0
0
2
4
6
8
10
12
14
16
18
20
1
2
3
4
5
6
I
B
= 160 A
I
B
= 140 A
I
B
= 120 A
I
B
= 100 A
I
B
= 80 A
I
B
= 60 A
I
B
= 40 A
I
B
= 20 A
I
B
= 160 A
I
B
= 140 A
I
B
= 120 A
I
B
= 100 A
I
B
= 80 A
I
B
= 60 A
I
B
= 40 A
I
B
= 20 A
0
0
5
10
15
20
25
1
2
3
4
5
6
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| UPA831TF-T1 | NPN SILICON EPITAXIAL TWIN TRANSISTOR |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UPA831TF | 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON EPITAXIAL TWIN TRANSISTOR |
| UPA831TF-T1 | 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON EPITAXIAL TWIN TRANSISTOR |
| UPA832 | 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE |
| UPA832TF | 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE |
| UPA832TF_99 | 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON EPITAXIAL TWIN TRANSISTOR |
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