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參數(shù)資料
| 型號： | UPA831 |
| 廠商： | NEC Corp. |
| 英文描述： | NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE |
| 中文描述： | NPN硅外延晶體管2不同元素在一個平面，鉛6引腳薄型包裝超超MINIMOLD |
| 文件頁數(shù)： | 3/16頁 |
| 文件大?。?/td> | 79K |
| 代理商： | UPA831 |
Data Sheet P14554EJ1V0DS00
3
μ
PA831TC
(2) Q2
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector Cutoff Current
I
CBO
V
CB
= 10 V, I
E
= 0
0.8
μ
A
Emitter Cutoff Current
I
EBO
V
EB
= 1 V, I
C
= 0
0.8
μ
A
DC Current Gain
h
FE
V
CE
= 3 V, I
C
= 7 mA
Note 1
70
150
Gain Bandwidth Product
f
T
V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
4.5
7.0
GHz
Feedback Capacitance
C
re
V
CB
= 3 V, I
E
= 0, f = 1 MHz
Note 2
0.9
pF
Insertion Power Gain
|
S
21e
|
2
V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
10.0
12.0
dB
Noise Figure
NF
V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
1.4
2.7
dB
Notes 1.
Pulse Measurement: PW
≤
350
μ
s, Duty Cycle
≤
2%
2.
Collector to base capacitance when measured with capacitance meter (automatic balanced bridge
method), with emitter connected to guard pin of capacitance meter.
h
FE
CLASSIFICATION
Rank
FB
Marking
24
h
FE
Value of Q1
70 to 140
h
FE
Value of Q2
70 to 150
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