參數(shù)資料
型號(hào)： UPA81
英文描述： UPA81C Data Sheet | Data Sheet[02/1982]
中文描述： UPA81C數(shù)據(jù)表|數(shù)據(jù)表[1982分之02]
文件頁數(shù)： 1/1頁
文件大?。?/td> 15K
代理商： UPA81
UPA814TF
NPN SILICON HIGH
FREQUENCY TRANSISTOR
SMALL PACKAGE OUTLINE:
SOT-363 package measures just 2.0 mm x 1.25 mm
LOW HEIGHT PROFILE:
Just 0.60 mm high
HIGH COLLECTOR CURRENT:
I
C
MAX = 100 mA
FEATURES
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE TS06
(Top View)
DESCRIPTION
The UPA814TF contains two NE688 NPN high frequency
silicon bipolar chips. NEC's new low profile TF package is ideal
for all portable wireless applicatons where reducing compo-
nent height is a prime consideration. Each transistor chip is
independently mounted and easily configured for two stage
cascade LNAs and other similar applications.
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25
°
C)
SYMBOLS
PARAMETERS
V
CBO
Collector to Base Voltage
V
CEO
Collector to Emitter Voltage
V
EBO
Emitter to Base Voltage
I
C
Collector Current
P
T
Total Power Dissipation
1 Die
2 Die
T
J
Junction Temperature
T
STG
Storage Temperature
UNITS
V
V
V
mA
RATINGS
9
6
2
100
mW
mW
°
C
°
C
110
200
150
-65 to +150
Note: 1.Operation in excess of any one of these parameters may
result in permanent damage.
PART NUMBER
PACKAGE OUTLINE
UPA814TF
TS06
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
I
CBO
I
EBO
h
FE
f
T
Cre
|S
21E
|
2
NF
Collector Cutoff Current at V
CB
= 5V, I
E
= 0
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
Forward Current Gain
1
at V
CE
= 1 V, I
C
= 3 mA
Gain Bandwidth at V
CE
= 3 V, I
C
= 20 mA, f = 2 GHz
Feedback Capacitance
2
at V
CB
= 1 V, I
E
= 0, f = 1 MHz
Insertion Power Gain at V
CE
= 3 V, I
C
=20 mA, f = 2 GHz
Noise Figure at V
CE
= 3 V, I
C
= 7 mA, f = 2 GHz
μ
A
μ
A
0.1
0.1
160
80
110
9.0
0.75
6.5
1.5
GHz
pF
dB
dB
0.85
h
FE1
/h
FE2
h
FE
Ratio:
0.85
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C)
Notes: 1. Pulsed measurement, pulse width
≤
350
μ
s, duty cycle
≤
2 %.
2. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge. For Tape and Reel version use
part number UPA814TF-T1, 3K per reel.
PIN OUT
1. Collector Transistor 1
2. Base Transistor 2
3. Collector Transistor 2
4. Emitter Transistor 2
5. Emitter Transistor 1
6. Base Transistor 1
h
FE1
= Smaller Value of Q
1
, or Q
2
h
FE2
= Larger Value of Q
1
or Q
2
2.1
±
0.1
1.25
±
0.1
0 ~ 0.1
0.13
±
0.05
0.6
±
0.1
0.45
2.0
±
0.2
0.65
1.3
1
2
3
4
5
6
(All Leads)
0.22
+0.10
- 0.05
California Eastern Laboratories
EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES
Headquarters 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 (408) 988-3500 Telex 34-6393 FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) Internet: http://WWW.CEL.COM
DATA SUBJECT TO CHANGE WITHOUT NOTICE
2/99
Note:
Pin 1 is the lower left most pin as
the package lettering is oriented
and read left to right.
相關(guān)PDF資料
PDF描述
UPA814TF-T1 BJT
UPA814TKB TRANSISTOR | BJT | PAIR | NPN | 6V V(BR)CEO | 100MA I(C) | SOT-363
UPA814T-T1 BJT
UPA828TC Discrete
UPA829TD TRANSISTOR | BJT | PAIR | NPN | 6V V(BR)CEO | 100MA I(C) | TSOP
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