參數(shù)資料
型號: UPA507TE
廠商: NEC Corp.
英文描述: P-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE FOR SWITCHING
中文描述: P溝道MOS場效應(yīng)管與肖特基二極管的開關(guān)
文件頁數(shù): 3/8頁
文件大?。?/td> 146K
代理商: UPA507TE
Data Sheet G16626EJ1V1DS
3
μ
PA507TE
MOS FET ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
I
DSS
V
DS
=
20 V, V
GS
= 0 V
1
μ
A
Gate Leakage Current
I
GSS
V
GS
=
m
8 V, V
DS
= 0 V
V
DS
=
10 V, I
D
=
1.0 mA
m
10
1.50
μ
A
Gate Cut-off Voltage
V
GS(off)
0.45
0.75
V
Forward Transfer Admittance
Note
| y
fs
|
V
DS
=
10 V, I
D
=
1.0 A
2.0
4.3
S
Drain to Source On-state Resistance
Note
R
DS(on)1
V
GS
=
4.5 V, I
D
=
1.0 A
68
85
m
R
DS(on)2
V
GS
=
2.5 V, I
D
=
1.0 A
84
120
m
R
DS(on)3
V
GS
=
1.8 V, I
D
=
1.0 A
109
180
m
Input Capacitance
C
iss
V
DS
=
10 V
380
pF
Output Capacitance
C
oss
V
GS
= 0 V
85
pF
Reverse Transfer Capacitance
C
rss
f = 1.0 MHz
45
pF
Turn-on Delay Time
t
d(on)
V
DD
=
10 V, I
D
=
1.0 A
10
ns
Rise Time
t
r
V
GS
=
4.0 V
5
ns
Turn-off Delay Time
t
d(off)
R
G
= 10
47
ns
Fall Time
t
f
28
ns
Total Gate Charge
Q
G
V
DD
=
16 V
4.7
nC
Gate to Source Charge
Q
GS
V
GS
=
4.0 V
0.9
nC
Gate to Drain Charge
Q
GD
I
D
=
2.0 A
1.5
nC
Body Diode Forward Voltage
Note
V
F(S-D)
I
F
= 2.0 A, V
GS
= 0 V
0.84
V
Note
Pulsed: PW
350
μ
s, Duty Cycle
2%
SCHOTTKY BARRIER DIODE ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Forward Voltage
V
F
I
F
= 1.0 A
0.35
0.38
V
Reverse Current
I
R
V
R
= 10 V
200
μ
A
Terminal Capacitance
C
T
f = 1.0 MHz, V
R
= 10 V
36
pF
TEST CIRCUIT 2 GATE CHARGE
TEST CIRCUIT 1 SWITCHING TIME
PG.
R
G
0
V
GS(
)
D.U.T.
R
L
V
DD
τ
= 1 s
Duty Cycle
1%
τ
PG.
50
D.U.T.
R
L
V
DD
I
G
=
2 mA
GS
Wave Form
DS
Wave Form
V
GS(
)
V
DS(
)
10%
0
0
90%
90%
90%
V
GS
V
DS
t
on
t
off
t
d(on)
t
r
t
d(off)
t
f
10%
10%
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