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參數(shù)資料
| 型號： | UPA505T |
| 廠商： | NEC Corp. |
| 英文描述： | N-CHANNEL/P-CHANNEL MOS FET 5-PIN 2 CIRCUITS |
| 中文描述： | N-CHANNEL/P-CHANNEL場效應晶體管5針2電路 |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 88K |
| 代理商： | UPA505T |
1996
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
μ
PA505T
PACKAGE DIMENSIONS (in millimeters)
2
1
0.95
1.9
2.9 ±0.2
0.8
1.1 to 1.4
0 to 0.1
0.16
+0.1
0
+
–
0.32
+0.1
0.95
PIN CONNECTION (Top View)
Marking: FA
The
μ
PA505T is a mini-mold device provided with two
MOS FET circuits. It achieves high-density mounting and
saves mounting costs.
FEATURES
Two source common MOS FET circuits in package the
same size as SC-59
Complementary MOS FETs are provided in one package.
Automatic mounting supported
Document No. G11241EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
N-CHANNEL/P-CHANNEL MOS FET (5-PIN 2 CIRCUITS)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain to Source Voltage
V
DSS
50/–50
V
Gate to Source Voltage
V
GSS
±
20/+16
±
100/+100
±
200/+200
V
Drain Current (DC)
I
D(DC)
mA
Drain Current (pulse)
I
D(pulse)
*
mA
Total Power Dissipation
P
T
300 (TOTAL)
mW
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
–55 to +150
C
*
PW
≤
10 ms, Duty Cycle
≤
50 %
Note
The left and right values in the ratings column are correspond to N-ch and P-ch FETs, respectively.
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