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參數(shù)資料
| 型號(hào)： | UPA2650T1E |
| 廠商： | NEC Corp. |
| 英文描述： | MOS FIELD EFFECT TRANSISTOR |
| 中文描述： | MOS場(chǎng)效應(yīng)管 |
| 文件頁(yè)數(shù)： | 1/9頁(yè) |
| 文件大?。?/td> | 208K |
| 代理商： | UPA2650T1E |
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
MOS FIELD EFFECT TRANSISTOR
μ
PA2650T1E
DUAL N-CHANNEL MOSFET
FOR SWITCHING
DATA SHEET
Document No. G18749EJ1V0DS00 (1st edition)
Date Published May 2007 NS CP(K)
Printed in Japan
2007
DESCRIPTION
The
μ
PA2650T1E is a switching device, which can be driven
directly by a 4.5 V power source.
The
μ
PA2650T1E contains dual MOSFET which features a
low on-state resistance and excellent switching characteristics,
and is suitable for applications such as DC/DC converter of
portable machine and so on.
FEATURES
4.5 V drive available MOSFET
Low on-state resistance MOSFET
MOSFET1 R
DS(on)1
= 48 m
Ω
TYP. (V
GS
= 10 V, I
D
= 3.0 A)
R
DS(on)2
= 55 m
Ω
TYP. (V
GS
= 4.5 V, I
D
= 3.0 A)
MOSFET2 R
DS(on)1
= 50 m
Ω
TYP. (V
GS
= 10 V, I
D
= 3.0 A)
R
DS(on)2
= 57 m
Ω
TYP. (V
GS
= 4.5 V, I
D
= 3.0 A)
ORDERING INFORMATION
PART NUMBER
PACKAGE
μ
PA2650T1E
6LD3x3MLP
Marking: A2650
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
Caution
This product is electrostatic-sensitive device due to low ESD capability and should be handled with
caution for electrostatic discharge.
V
ESD
=
±
150 V TYP. (C = 200 pF, R = 0
Ω
, Single Pulse)
PIN CONNECTION (Top View)
1
2
3
4
5
6
MOSFET1
MOSFET2
1: Gate1
2: Drain1/Source2 (Heat sink2)
3: Gate2
4: Drain2 (Heat sink1)
5: Drain1/Source2 (Heat sink2)
6: Source1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| UPA2680T1E | MOSFET WITH SCHOTTKY BARRIER DIODE |
| UPA2716GR | SWITCHING P-CHANNEL POWER MOSFET |
| UPA2717GR | SWITCHING P-CHANNEL POWER MOSFET |
| UPA2718GR | SWITCHING P-CHANNEL POWER MOSFET |
| UPA2719GR | SWITCHING P-CHANNEL POWER MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UPA2650T1EE2 | 制造商:NEC 功能描述:New |
| UPA2660T1R | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:DUAL N-CHANNEL MOSFET 20 V, 4.0 A, 42 m |
| UPA2660T1R-E2-AX | 制造商:Renesas Electronics Corporation 功能描述:MOSFET - Tape and Reel 制造商:Renesas Electronics Corporation 功能描述:MOSFET 2N-CH 20V 4A 6SON |
| UPA2670T1R | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:DUAL P-CHANNEL MOSFET -20 V, -3.0 A, 79 m |
| UPA2670T1R-E2-AX | 制造商:Renesas Electronics Corporation 功能描述:MOSFET 制造商:Renesas Electronics Corporation 功能描述:MOSFET - Tape and Reel 制造商:Renesas Electronics Corporation 功能描述:MOSFET P-CH -20V -3A 6HUSON |
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