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參數(shù)資料
| 型號： | UPA2451 |
| 英文描述： | UPA2451 Data Sheet | Data Sheet[03/2002] |
| 中文描述： | UPA2451數(shù)據(jù)表|數(shù)據(jù)表[03/2002] |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 70K |
| 代理商： | UPA2451 |
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
2001
MOS FIELD EFFECT TRANSISTOR
μ
PA2450
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DATA SHEET
Document No.
Date Published
Printed in Japan
G15612EJ1V0DS00 (1st edition)
March 2002 NS CP(K)
DESCRIPTION
The
μ
PA2450 is a switching device which can be driven
directly by a 2.5 V power source.
This device features a low on-state resistance and
excellent switching characteristics, and is suitable for
applications such as power switch of portable machine and
so on.
FEATURES
2.5 V drive avaliable
Low on-state resistance
R
DS(on)1
= 17.5 m
MAX. (V
GS
= 4.5 V, I
D
= 4.0 A)
R
DS(on)2
= 18.5 m
MAX. (V
GS
= 4.0 V, I
D
= 4.0 A)
R
DS(on)3
= 22.0 m
MAX. (V
GS
= 3.1 V, I
D
= 4.0 A)
R
DS(on)4
= 27.5 m
MAX. (V
GS
= 2.5 V, I
D
= 4.0 A)
Built-in G-S protection diode against ESD
ORDERING INFORMATION
PART NUMBER
PACKAGE
μ
PA2450TL
6PIN HWSON (4521)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
V
DSS
V
GSS
20
±12
V
V
Drain Current (DC) (T
A
= 25°C)
Drain Current (pulse)
Note1
Total Power Dissipation (2 unit)
Note2
Total Power Dissipation (2 unit)
Note3
I
D(DC)
±8.6
A
I
D(pulse)
±80
A
P
T1
2.5
W
P
T2
0.7
W
Channel Temperature
T
ch
150
°C
Storage Temperature
T
stg
–55 to +150
°C
Notes 1.
PW
≤
10
μ
s, Duty Cycle
≤
1%
2.
T
A
= 25°C Mounted on ceramic board.
3.
T
A
= 25°C Mounted on FR4 board.
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding the
rated voltage may be applied to this device.
PACKAGE DRAWING (Unit: mm)
1
2
3
6
5
4
4.4
±
0.1
5.0
±
0.1
0
±
0
0
+
0
0
0
±
0
0
0
+
0
0
7
(0.9)
(0.15)
(
(3.05)
(0.50)
1
±
0
2
±
0
1,2:
3:
7:
Source 1
Gate 1
Drain
5,6:
4:
Source 2
Gate 2
EQUIVALENT CIRCUIT
Source2
Body
Diode
Gate
Protection
Diode
Gate2
Drain2
Source1
Body
Diode
Gate
Protection
Diode
Gate1
Drain1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| UPA2451TL | TRANSISTOR | MOSFET | COMMON DRAIN | N-CHANNEL | 30V V(BR)DSS | 8.2A I(D) | SO |
| UPA2700 | UPA2700TP Data Sheet | Data Sheet[05/2002] |
| UPA2713 | UPA2713GR Data Sheet | Data Sheet[01/2002] |
| UPA2714 | UPA2714GR Data Sheet | Data Sheet[11/2002] |
| UPA2730 | UPA2730TP Data Sheet | Data Sheet[11/2002] |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UPA2451B | 制造商:NEC 制造商全稱:NEC 功能描述:N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA2451BTL | 制造商:NEC 制造商全稱:NEC 功能描述:N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA2451BTL-E1 | 制造商:Renesas Electronics Corporation 功能描述: |
| UPA2451BTL-E2 | 制造商:Renesas Electronics Corporation 功能描述: |
| UPA2451C | 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
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