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參數(shù)資料
| 型號： | UPA2450B |
| 廠商： | NEC Corp. |
| 英文描述： | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| 中文描述： | N溝道MOS場效應(yīng)晶體管開關(guān) |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 140K |
| 代理商： | UPA2450B |
Data Sheet G16635EJ1V0DS
2
μ
PA2450B
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 20.0 V, V
GS
= 0 V
1.0
μ
A
Gate Leakage Current
I
GSS
V
GS
=
±
12.0 V, V
DS
= 0 V
±10.0
μ
A
Gate Cut-off Voltage
Forward Transfer Admittance
Note
Drain to Source On-state Resistance
Note
V
GS(off)
V
DS
= 10.0 V, I
D
= 1.0 mA
0.50
1.50
V
| y
fs
|
V
DS
= 10.0 V, I
D
= 4.0 A
3.5
S
R
DS(on)1
V
GS
= 4.5 V, I
D
= 4.0 A
11.0
12.5
17.5
m
R
DS(on)2
V
GS
= 4.0 V, I
D
= 4.0 A
11.5
13.0
18.5
m
R
DS(on)3
V
GS
= 3.1 V, I
D
= 4.0 A
12.0
14.5
22.0
m
R
DS(on)4
V
GS
= 2.5 V, I
D
= 4.0 A
15.3
18.0
27.5
m
Input Capacitance
C
iss
V
DS
= 10.0 V
520
pF
Output Capacitance
C
oss
V
GS
= 0 V
133
pF
Reverse Transfer Capacitance
C
rss
f = 1.0 MHz
92
pF
Turn-on Delay Time
t
d(on)
V
DD
= 10.0 V
21
ns
Rise Time
t
r
I
D
= 4.0 A
86
ns
Turn-off Delay Time
t
d(off)
V
GS
= 4.0 V
124
ns
Fall Time
t
f
R
G
= 6
107
ns
Total Gate Charge
Q
G
V
DD
= 16.0 V
8.0
nC
Gate to Source Charge
Q
GS
V
GS
= 4.0 V
1.3
nC
Gate to Drain Charge
Body Diode Forward Voltage
Note
Q
GD
I
D
= 8.6 A
3.3
nC
V
F(S-D)
I
F
= 8.6 A, V
GS
= 0 V
0.83
V
Reverse Recovery Time
t
rr
I
F
= 8.6 A, V
GS
= 0 V
128
ns
Reverse Recovery Charge
Q
rr
di/dt = 100 A/
μ
s
129
nC
Note
Pulsed: PW
≤
350
μ
s, Duty Cycle
≤
2%
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
PG.
R
G
0
V
GS
D.U.T.
R
L
V
DD
τ
= 1 s
Duty Cycle
≤
1%
τ
PG.
50
D.U.T.
R
L
V
DD
I
G
= 2 mA
V
GS
Wave Form
DS
Wave Form
V
GS
V
DS
10%
0
0
90%
90%
90%
V
GS
V
DS
t
on
t
off
t
d(on)
t
r
t
d(off)
t
f
10%
10%
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相關(guān)代理商/技術(shù)參數(shù) |
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