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參數(shù)資料
| 型號： | UPA1855GR-9JG |
| 英文描述： | TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 20V V(BR)DSS | 6A I(D) | SO |
| 中文描述： | 晶體管| MOSFET的|配對| N溝道| 20V的五（巴西）直| 6A條（?。﹟蘇 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 64K |
| 代理商： | UPA1855GR-9JG |
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confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
1998, 1999
MOS FIELD EFFECT TRANSISTOR
μ
PA1854
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DATA SHEET
Document No.
Date Published
Printed in Japan
D13295EJ2V0DS00 (2nd edition)
May 2001 NS CP(K)
DESCRIPTION
The
μ
PA1854 is a switching device which can be
driven directly by a 2.5
-
V power source.
The
μ
PA1854 features a low on-state resistance and
excellent switching characteristics, and is suitable for
applications such as power switch of portable machine
and so on.
FEATURES
Can be driven by a 2.5-V power source
Low on-state resistance
R
DS(on)1
= 60 m
MAX. (V
GS
= –4.5 V, I
D
= –1.5 A)
R
DS(on)2
= 70 m
MAX. (V
GS
= –4.0 V, I
D
= –1.5 A)
R
DS(on)3
= 105 m
MAX. (V
GS
= –2.5 V, I
D
= –1.5 A)
Built-in G-S protection diode against ESD
ORDERING INFORMATION
PART NUMBER
PACKAGE
μ
PA1854GR-9JG
Power TSSOP8
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage
V
DSS
–12
V
Gate to Source Voltage
V
GSS
–10/+5
V
Drain Current (DC)
Drain Current (pulse)
Note1
Total Power Dissipation
Note2
I
D(DC)
m
3.0
m
1
2
2.0
A
I
D(pulse)
A
P
T
W
Channel Temperature
T
ch
150
°C
Storage Temperature
T
stg
–55 to +150
°C
Notes 1.
PW
≤
10
μ
s, Duty Cycle
≤
1 %
2.
Mounted on ceramic substrate of 5000
mm
2
x 1.1
mm
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
PACKAGE DRAWING (Unit : mm)
1
4
8
5
6.4 ±0.2
4.4 ±0.1
1.0 ±0.2
0
±
0.1
0.8 MAX.
3.15 ±0.15
3.0 ±0.1
0.65
0.10 M
0.27
0.08
–
0.25
0.5
0.6
0.1
–
3
°
+5
°
–
3
°
1.2 MAX.
1.0±0.05
0.1±0.05
1 :Drain1
2, 3 :Source1
4 :Gate1
5 :Gate2
6, 7 :Source2
8 :Drain2
EQUIVALENT CIRCUIT
Source1
Body
Diode
Gate
Protection
Diode
Gate1
Drain1
Source2
Body
Diode
Gate
Protection
Diode
Gate2
Drain2
The mark
#
shows major revised points.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| UPA1870 | UPA1870 Data Sheet | Data Sheet[04/2001] |
| UPA1870GR-9JG | TRANSISTOR | MOSFET | HALF BRIDGE | 20V V(BR)DSS | 6A I(D) | SO |
| UPA1872 | UPA1872 Data Sheet | Data Sheet[12/2001] |
| UPA1872GR-9JG | TRANSISTOR | MOSFET | COMMON DRAIN | N-CHANNEL | 20V V(BR)DSS | 10A I(D) | TSSOP |
| UPA1874 | UPA1874 Data Sheet | Data Sheet[12/2001] |
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