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參數(shù)資料
| 型號： | UPA1812GR-9JG |
| 廠商： | NEC Corp. |
| 英文描述： | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| 中文描述： | P溝道MOS場效應(yīng)晶體管開關(guān) |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 68K |
| 代理商： | UPA1812GR-9JG |
Data Sheet D12967EJ1V0DS00
4
μ
PA1812
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
100
V
GS
=
4.0 V
1
0.1
10
100
I
D
- Drain Current - A
R
D
20
80
60
40
T
A
= 125C
75C
25C
25C
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
1
0.1
10
100
I
D
- Drain Current - A
R
D
20
80
60
40
V
GS
=
4.5 V
T
A
= 125C
75C
25C
25C
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
1
0.1
10
100
I
D
- Drain Current - A
R
D
10
40
30
20
50
T
A
= 125C
75C
25C
25C
V
GS
=
10 V
50
20
0
40
60
80
0
50
100
150
R
D
-
Tch - Channel Temperature -
C
I
D
=
2.5 A
V
GS
=
4.0 V
10 V
4.5 V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
0
20
40
60
80
100
5
10
15
20
25
R
D
-
V
GS
- Gate to Source Voltage - V
I
D
=
2
.5 A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
10
1
100
1000
10000
100
10
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
C
i
,
o
,
r
V
DS
- Drain to Source Voltage - V
C
oss
C
rss
f = 1 MHz
V
GS
= 0 V
C
iss
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