參數(shù)資料
型號: UPA1715G
廠商: NEC Corp.
英文描述: SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
中文描述: 開關(guān)P溝道功率MOS FET工業(yè)用
文件頁數(shù): 4/8頁
文件大?。?/td> 67K
代理商: UPA1715G
Data Sheet G16111EJ1V0DS
4
μ
PA620TT
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
I
D
0
5
10
15
20
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
Pulsed
4.0 V
V
GS
= 4.5 V
2.5 V
V
DS
- Drain to Source Voltage - V
I
D
0.0001
0.001
0.01
0.1
1
10
0
0.5
1
1.5
2
2.5
V
DS
= 10 V
Pulsed
T
A
= 125°C
75°C
25°C
25°C
V
GS
- Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
G
0.4
0.6
0.8
1
1.2
1.4
-50
0
50
100
150
V
DS
= 10 V
I
D
= 1.0 mA
T
ch
- Channel Temperature -
°
C
|
f
0.01
0.1
1
10
100
0.01
0.1
1
10
T
A
=
25°C
25°C
75°C
125°C
V
DS
= 10 V
Pulsed
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
R
D
0
20
40
60
80
-50
0
50
100
150
V
GS
= 2.5 V
4.0 V
4.5 V
I
D
= 2.5 A
Pulsed
T
ch
- Channel Temperature - °C
R
D
0
20
40
60
80
0
2
4
6
8
10
12
Pulsed
I
D
= 2.5 A
V
GS
- Gate to Source Voltage - V
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