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參數(shù)資料
| 型號(hào)： | UP1856L-AA3-R |
| 廠商： | UNISONIC TECHNOLOGIES CO LTD |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | HIGH CURRENT TRANSISTOR |
| 中文描述： | 2000 mA, 200 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | LEAD FREE PACKAGE-4 |
| 文件頁(yè)數(shù)： | 2/3頁(yè) |
| 文件大小： | 97K |
| 代理商： | UP1856L-AA3-R |
UP1856
PNP SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R207-014,B
ABS OLUT E MAX IMUM RAT ING
PARAMETER
SYMBOL
V
CBO
V
CEO
V
EBO
I
C(PEAK)
I
C
P
D
T
J
T
STG
RATINGS
-220
-200
-6
-5
-2
1
+150
-40 ~ +150
UNIT
V
V
V
A
A
W
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at Ta=25°C
Junction Temperature
Storage Temperature
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECT RICAL CHARACT ERIS T ICS
(Ta = 25
unless otherwise specified)
PARAMETER
SYMBOL
BV
CEO
BV
CBO
BV
EBO
TEST CONDITIONS
I
C
= -10mA, I
B
=0 (Note)
I
C
= -0.1mA, I
E
=0
I
E
= -0.1mA, I
C
=0
I
C
= -100mA, I
B
= -10mA
I
C
= -1A, I
B
= -100mA
I
C
= -2A, I
B
=-400mA
I
C
=-2A, I
B
=-400mA
I
C
=-2A, V
CE
=-5V (Note)
V
CB
=-200V, I
E
=0
V
EB
=-6V, I
C
=0
I
C
=-10mA, V
CE
=-5V
I
C
=-1A, V
CE
=-5V
I
C
=-2A, V
CE
=-5V
I
C
=-5A, V
CE
=-5V
I
C
=-100mA, V
CE
=-10V
f=50MHz
V
CB
=-20V, f=1MHz
I
C
=-1A, I
B1
=-100mA
I
B2
=100mA, V
CC
=-50V
MIN
-200
-220
-6
100
100
50
TYP
-240
-300
-8
-30
-120
-168
-970
-810
200
200
150
10
MAX
-50
-165
-275
-1110
-950
-50
-10
300
UNIT
V
V
V
mV
mV
mV
mV
mV
nA
nA
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage(Note)
V
CE(SAT)
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
V
BE(SAT)
V
BE(ON)
I
CBO
I
EBO
h
FE1
h
FE2
h
FE3
h
FE4
DC Current Gain (Note)
Transition Frequency
f
T
110
MHz
Output Capacitance
Turn-on Time
Turn-off Time
Note: Pulsed test: duty cycle
≤
2%, t
P
=300μsec.
C
ob
t
ON
t
OFF
32
67
1140
pF
ns
ns
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