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參數(shù)資料
| 型號： | UP1753-AA3-R |
| 廠商： | UNISONIC TECHNOLOGIES CO LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | HIGH CURRENT LOW V TRANSISTOR |
| 中文描述： | 6 A, 100 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | SOT-223, 4 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 100K |
| 代理商： | UP1753-AA3-R |
UP1753
NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
QW-R220-020,A
2 of 4
ABS OLUT E MAX IMUM RAT INGS
PARAMETER
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
D
T
J
T
STG
RATINGS
200
100
6
10
6
3
+150
-55 ~ +150
UNIT
V
V
V
A
A
W
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at Ta =25
Junction Temperature
Storage Temperature
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECT RICAL CHARACT ERIS T ICS
Ta= 25
(unless otherwise specified)
PARAMETER
SYMBOL
BV
CBO
BV
CEO
BV
EBO
TEST CONDITIONS
I
C
=100μA
I
C
=10mA (Note1)
Ic=100μA
V
CB
=150V, Ta=25
V
CB
=150V
Ta=100
V
CB
=150V, Ta=25
R
≤
1K
V
CB
=150V, Ta=100
V
EB
=6V
I
C
=0.1A, I
B
=5mA (Note1)
I
C
=2A, I
B
=100mA (Note1)
I
C
=5A, I
B
=500mA (Note1)
I
C
=5A, I
B
=500mA (Note1)
I
C
=5A, V
CE
=2V (Note1)
I
C
=10mA, V
CE
=2V
I
C
=2A, V
CE
=2V (Note1)
I
C
=4A, V
CE
=2V (Note1)
I
C
=10A, V
CE
=2V (Note1)
I
C
=100mA, V
CE
=10V f=50MHz
V
CB
=10V, f=1MHz
I
C
=1A, V
CC
=10V
I
B1
=I
B2
=100mA
MIN
200
100
6
TYP
300
120
8
MAX
10
1
10
1
10
50
150
330
1250
1100
300
UNIT
V
V
V
nA
μA
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
I
CBO
nA
μA
nA
mV
mV
mV
mV
mV
MHz
pF
ns
ns
Collector Cut-Off Current
I
CER
Emitter Cut-Off Current
I
EBO
Collector-Emitter Saturation Voltage
V
CE(SAT)
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
V
BE(SAT)
V
BE(ON)
100
100
50
20
200
200
100
100
38
50
1600
Static Forward Current Transfer Ratio
h
FE
Transition Frequency
Output Capacitance
f
T
C
ob
t
ON
t
OFF
Switching Times
Note: 1.Measured under pulsed conditions. Pulse width=300μs. Duty cycle
≤
2%,
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