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參數(shù)資料
| 型號(hào)： | UNR511XSERIES(UN511XSERIES) |
| 英文描述： | UNR511X Series (UN511X Series) - PNP Transistors with built-in Resistor |
| 中文描述： | UNR511X系列（UN511X系列） -新進(jìn)步黨內(nèi)置晶體管，電阻， |
| 文件頁(yè)數(shù)： | 3/18頁(yè) |
| 文件大小： | 634K |
| 代理商： | UNR511XSERIES(UN511XSERIES) |
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11
Transistors with built-in Resistor
UNR5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/
511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z
Characteristics charts of UNR511D
IC — VCE
VCE(sat) — IC
hFE — IC
Cob — VCB
IO — VIN
VIN — IO
Characteristics charts of UNR511E
IC — VCE
VCE(sat) — IC
hFE — IC
0
–12
– 2
–10
– 4
– 8
– 6
– 60
– 50
– 40
– 30
– 20
–10
Collector to emitter voltage VCE (V)
Collector
current
I
C
(mA
)
Ta=25C
IB= –1.0mA
– 0.9mA
– 0.8mA
– 0.7mA
– 0.6mA
– 0.5mA
– 0.4mA
– 0.3mA
– 0.2mA
– 0.1mA
–0.01
–0.03
– 0.1 – 0.3
– 0.1
– 0.3
–1
– 3
–10
– 30
–100
–1
– 3
–10
– 30
–100
Collector current IC (mA)
Collector
to
emitter
saturation
voltage
V
CE(sat)
(V
)
IC/IB=10
Ta=75C
25C
– 25C
0
–1
– 3
40
80
120
160
–10
– 30
–100 – 300 –1000
Forward
current
transfer
ratio
h
FE
Collector current IC (mA)
VCE= –10V
Ta=75C
25C
– 25C
0
– 0.1 – 0.3
6
5
4
3
2
1
–1
– 3
–10
– 30
–100
Collector
output
capacitance
C
ob
(pF
)
Collector to base voltage
VCB (V)
f=1MHz
IE=0
Ta=25C
–1
– 3
–1.5
–10
– 30
–100
– 300
–1000
–3000
–10000
– 4.0
– 3.5
– 3.0
– 2.5
– 2.0
Output
current
I
O
(
A
)
Input voltage VIN (V)
VO= – 5V
Ta=25C
–0.01
–0.03
–0.1
–0.3
– 0.1
– 0.3
–1
– 3
–10
– 30
–100
–1
–3
–10
–30
–100
Input
voltage
V
IN
(V
)
Output current IO (mA)
VO= – 0.2V
Ta=25C
0
–12
– 2
–10
– 4
– 8
– 6
– 60
– 50
– 40
– 30
– 20
–10
Collector to emitter voltage VCE (V)
Collector
current
I
C
(mA
)
Ta=25C
IB= –1.0mA
– 0.9mA
– 0.8mA – 0.7mA
– 0.6mA
– 0.5mA
– 0.4mA
– 0.3mA
– 0.2mA
– 0.1mA
–0.01
–0.03
– 0.1 – 0.3
– 0.1
– 0.3
–1
– 3
–10
– 30
–100
–1
– 3
–10
– 30
–100
Collector current IC (mA)
Collector
to
emitter
saturation
voltage
CE(sat)
(V
)
IC/IB=10
Ta=75C
25C
– 25C
0
–1
– 3
100
200
300
400
–10
– 30
–100 – 300 –1000
Forward
current
transfer
ratio
h
FE
Collector current IC (mA)
VCE=–10V
Ta=75C
25C
– 25C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| UNR511Z(UN511Z) | 複合デバイス － 抵抗內(nèi)蔵型トランジスタ |
| UNR5115Q | TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SC-70 |
| UNR5115R | TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SC-70 |
| UNR5115S | TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SC-70 |
| UNR5213(UN5213) | Composite Device - Transistors with built-in Resistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UNR511Z | 制造商:PANASONIC 制造商全稱(chēng):Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planar type |
| UNR511Z(UN511Z) | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:複合デバイス － 抵抗內(nèi)蔵型トランジスタ |
| UNR5154 | 制造商:PANASONIC 制造商全稱(chēng):Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planar type For digital circuits |
| UNR5154(UN5154) | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:複合デバイス － 抵抗內(nèi)蔵型トランジスタ |
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