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參數(shù)資料
| 型號(hào)： | UNR421E |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | Flash Memory IC; Memory Configuration:128K x 8; Memory Size:1Mbit; Package/Case:32-DIP; Supply Voltage Max:5.5V; Access Time, Tacc:55ns; Mounting Type:Through Hole RoHS Compliant: Yes |
| 中文描述： | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | ROHS COMPLIANT, NS-B1, 3 PIN |
| 文件頁數(shù)： | 1/14頁 |
| 文件大?。?/td> | 334K |
| 代理商： | UNR421E |
Transistors with built-in Resistor
UNR421x Series
(UN421x Series)
Silicon NPN epitaxial planar type
1
Publication date: December 2003
SJH00020BED
For digital circuits
■
Features
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts
New S type package, allowing supply with the radial taping
■
Resistance by Part Number
(R
1
)
47 k
10 k
22 k
47 k
10 k
10 k
4.7 k
22 k
0.51 k
1 k
47 k
47 k
4.7 k
10 k
4.7 k
(R
2
)
10 k
22 k
47 k
47 k
5.1 k
10 k
10 k
22 k
10 k
4.7 k
4.7 k
UNR4210 (UN4210)
UNR4211 (UN4211)
UNR4212 (UN4212)
UNR4213 (UN4213)
UNR4214 (UN4214)
UNR4215 (UN4215)
UNR4216 (UN4216)
UNR4217 (UN4217)
UNR4218 (UN4218)
UNR4219 (UN4219)
UNR421D (UN421D)
UNR421E (UN421E)
UNR421F (UN421F)
UNR421K (UN421K)
UNR421L (UN421L)
■
Absolute Maximum Ratings
T
a
=
25
°
C
Note) The part numbers in the parenthesis show conventional part number.
Internal Connection
Unit: mm
1: Emitter
2: Collector
3: Base
NS-B1 Package
4.0
±
0.2
0.75 max.
2.0
±
0.2
0.45
(2.5) (2.5)
0.7
±
0.1
2
3
1
+0.20
0.45
+0.20
7
3
±
0
(
(
1
±
0
B
R
1
R
2
C
E
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
50
V
Collector-emitter voltage (Base open)
V
CEO
I
C
50
V
Collector current
100
mA
Total power dissipation
P
T
300
mW
Junction temperature
T
j
T
stg
150
°
C
°
C
Storage temperature
55 to
+
150
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| UNR421K | Flash Memory IC; Leaded Process Compatible:Yes; Memory Configuration:128K x 8; Memory Size:1Mbit; Package/Case:32-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5.5V; Access Time, Tacc:70ns; Mounting Type:Surface Mount RoHS Compliant: Yes |
| UNR421L | Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:1Mbit; Package/Case:32-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:70ns; Series:AM29 RoHS Compliant: Yes |
| UNR421X | Silicon NPN epitaxial planar type |
| UNR4221 | Silicon NPN epitaxial planar type |
| UNR4222 | Silicon NPN epitaxial planar type |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UNR421E(UN421E) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:複合デバイス － 抵抗內(nèi)蔵型トランジスタ |
| UNR421F | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planar type |
| UNR421F(UN421F) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Composite Device - Transistors with built-in Resistor |
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