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參數(shù)資料
| 型號： | UNR4216(UN4216) |
| 英文描述： | Composite Device - Transistors with built-in Resistor |
| 中文描述： | 復(fù)合裝置-內(nèi)置晶體管，電阻， |
| 文件頁數(shù)： | 2/14頁 |
| 文件大?。?/td> | 540K |
| 代理商： | UNR4216(UN4216) |
2
Transistors with built-in Resistor
UNR4211/4212/4213/4214/4215/4216/4217/
4218/4219/4210/421D/421E/421F/421K/421L
I
Electrical Characteristics
(Ta=25C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector cutoff current
I
CBO
V
CB
= 50V, I
E
= 0
0.1
μ
A
μ
A
I
CEO
V
CE
= 50V, I
B
= 0
0.5
UNR4211
0.5
UNR4212/4214/421E/421D
0.2
UNR4213
0.1
UNR4215/4216/4217/4210
I
EBO
V
EB
= 6V, I
C
= 0
0.01
mA
UNR421F/421K
1.0
UNR4219
1.5
UNR4218/421L
2.0
Collector to base voltage
V
CBO
I
C
= 10
μ
A, I
E
= 0
50
V
Collector to emitter voltage
V
CEO
I
C
= 2mA, I
B
= 0
50
V
UNR4211
35
UNR4212/421E
60
UNR4213/4214
h
FE
V
CE
= 10V, I
C
= 5mA
80
UNR4215*/4216*/4217*/4210*
160
460
UNR421F/421D/4219
30
UNR4218/421K/421L
20
Collector to emitter saturation voltage
V
CE(sat)
V
OH
I
C
= 10mA, I
B
= 0.3mA
V
CC
= 5V, V
B
= 0.5V, R
L
= 1k
V
CC
= 5V, V
B
= 2.5V, R
L
= 1k
V
CC
= 5V, V
B
= 3.5V, R
L
= 1k
V
CC
= 5V, V
B
= 10V, R
L
= 1k
V
CC
= 5V, V
B
= 6V, R
L
= 1k
V
CB
= 10V, I
E
= –2mA, f = 200MHz
0.25
V
Output voltage high level
4.9
V
Output voltage low level
0.2
UNR4213/421K
V
OL
0.2
V
UNR421D
0.2
UNR421E
0.2
Transition frequency
f
T
150
MHz
UNR4211/4214/4215/421K
10
UNR4212/4217
22
UNR4213/421D/421E/4210
R
1
(–30%)
47
(+30%)
k
UNR4216/421F/421L
4.7
UNR4218
0.51
UNR4219
1
UNR4211/4212/4213/421L
0.8
1.0
1.2
UNR4214
0.17
0.21
0.25
UNR4218/4219
0.08
0.1
0.12
UNR421D
R
1
/R
2
3.7
4.7
5.7
UNR421E
1.7
2.14
2.6
UNR421F
0.37
0.47
0.57
UNR421K
1.7
2.13
2.6
Emitter
cutoff
current
Forward
current
transfer
ratio
Input
resis-
tance
Resis-
tance
ratio
* h
FE
rank classification (UNR4215/4216/4217/4210)
Rank
Q
R
S
h
FE
160 to 260
210 to 340
290 to 460
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| UNR4214 | Composite Device - Transistors with built-in Resistor |
| UN4214 | Composite Device - Transistors with built-in Resistor |
| UNR4215 | Composite Device - Transistors with built-in Resistor |
| UN4215 | Composite Device - Transistors with built-in Resistor |
| UNR4216 | Composite Device - Transistors with built-in Resistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UNR4217 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planar type |
| UNR4217(UN4217) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:複合デバイス － 抵抗內(nèi)蔵型トランジスタ |
| UNR42170RA | 功能描述:TRANS NPN W/RES 210 HFE NS-B1 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路﹐預(yù)偏壓式 系列:- 標(biāo)準(zhǔn)包裝:10,000 系列:- 晶體管類型:NPN - 預(yù)偏壓 電流 - 集電極 (Ic)（最大）:100mA 電壓 - 集電極發(fā)射極擊穿（最大）:50V 電阻器 - 基極 (R1)（歐）:47k 電阻器 - 發(fā)射極 (R2)（歐）:47k 在某 Ic、Vce 時的最小直流電流增益 (hFE):70 @ 5mA，5V Ib、Ic條件下的Vce飽和度（最大）:300mV @ 500µA，10mA 電流 - 集電極截止（最大）:- 頻率 - 轉(zhuǎn)換:100MHz 功率 - 最大:250mW 安裝類型:表面貼裝 封裝/外殼:SC-70，SOT-323 供應(yīng)商設(shè)備封裝:PG-SOT323-3 包裝:帶卷 (TR) 其它名稱:SP000756242 |
| UNR4218 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planar type |
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