參數(shù)資料
型號(hào): UNR412Y(UN412Y)
英文描述: 複合デバイス - 抵抗內(nèi)蔵型トランジスタ
中文描述: 複合デバイス-抵抗內(nèi)蔵型トランジスタ
文件頁(yè)數(shù): 1/15頁(yè)
文件大小: 376K
代理商: UNR412Y(UN412Y)
Transistors with built-in Resistor
UNR41XX Series
(UN41XX Series)
Silicon PNP epitaxial planar transistor
1
Publication date: July 2002
SJH00018CED
For digital circuits
Features
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts
New S type package, allowing supply with the radial taping
Resistance by Part Number
(R
1
)
47 k
10 k
22 k
47 k
10 k
10 k
4.7 k
22 k
0.51 k
1 k
47 k
47 k
4.7 k
2.2 k
4.7 k
2.2 k
4.7 k
(R
2
)
10 k
22 k
47 k
47 k
5.1 k
10 k
10 k
22 k
10 k
10 k
4.7 k
47 k
47 k
UNR4110 (UN4110)
UNR4111 (UN4111)
UNR4112 (UN4112)
UNR4113 (UN4113)
UNR4114 (UN4114)
UNR4115 (UN4115)
UNR4116 (UN4116)
UNR4117 (UN4117)
UNR4118 (UN4118)
UNR4119 (UN4119)
UNR411D (UN411D)
UNR411E (UN411E)
UNR411F (UN411F)
UNR411H (UN411H)
UNR411L (UN411L)
UNR411M
UNR411N
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Rating
Unit
Collector to base voltage
V
CBO
50
50
100
V
Collector to emitter voltage
V
CEO
V
Collector current
I
C
P
T
mA
Total power dissipation
300
mW
Junction temperature
T
j
150
°
C
°
C
Storage temperature
T
stg
55 to
+
150
B
R
1
R
2
C
E
Internal Connection
Unit: mm
1: Emitter
2: Collector
3: Base
NS-B1 Package
4.0
±
0.2
0.75 max.
2.0
±
0.2
0.45
(2.5) (2.5)
0.7
±
0.1
2
3
1
+0.20
0.45
+0.20
7
3
±
0
(
(
1
±
0
Note) The part numbers in the parenthesis show conventional part number.
相關(guān)PDF資料
PDF描述
UNR4113(UN4113) 複合デバイス - 抵抗內(nèi)蔵型トランジスタ
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UNR4115(UN4115) 複合デバイス - 抵抗內(nèi)蔵型トランジスタ
UNR4121(UN4121) 複合デバイス - 抵抗內(nèi)蔵型トランジスタ
UNR4119(UN4119) 複合デバイス - 抵抗內(nèi)蔵型トランジスタ
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