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參數資料
| 型號： | UNR411M |
| 英文描述： | Composite Device - Transistors with built-in Resistor |
| 中文描述： | 復合裝置-內置晶體管，電阻， |
| 文件頁數： | 2/15頁 |
| 文件大?。?/td> | 376K |
| 代理商： | UNR411M |
2
UNR41XX Series
SJH00018CED
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector cutoff current
I
CBO
I
CEO
V
CB
=
50 V, I
E
=
0
V
CE
=
50 V, I
B
=
0
V
EB
=
6 V, I
C
=
0
0.1
0.5
0.5
0.2
μ
A
Emitter
cutoff
current
UNR4111
I
EBO
mA
UNR4112/4114/411D/
411E/411M/411N
UNR4113
0.1
0.01
1.0
1.5
2.0
UNR4110/4115/4116/4117
UNR411F/411H
UNR4119
UNR4118/411L
Collector to base voltage
V
CBO
I
C
=
10
μ
A, I
E
=
0
I
C
=
2 mA, I
B
=
0
V
CE
=
10 V, I
C
=
5 mA
50
50
V
Collector to emitter voltage
V
CEO
h
FE
V
DC
UNR4111
35
current
UNR4112/411E
60
gain
UNR4113/4114/411M
80
UNR4110
*
/41115
*
/4116
*
/
4117
*
160
460
UNR4118/411L
20
UNR4119/411D/411F/411H
30
UNR411N
80
400
Collector to emitter saturation voltage
V
CE(sat)
I
C
=
10 mA, I
B
=
0.3 mA
V
CC
=
5 V, V
B
=
0.5 V, R
L
=
1 k
V
CC
=
5 V, V
B
=
2.5 V, R
L
=
1 k
V
CC
=
5 V, V
B
=
3.5 V, R
L
=
1 k
V
CC
=
5 V, V
B
=
10 V, R
L
=
1 k
V
CC
=
5 V, V
B
=
6 V, R
L
=
1 k
V
CB
=
10 V, I
E
=
2 mA, f
=
200 MHz
0.25
V
High level output voltage high level
V
OH
4.9
V
Low level output voltage
V
OL
0.2
V
UNR4113
UNR411D
UNR411E
Transition frequency
f
T
80
MHz
Input
UNR4118
R
1
30%
0.51
+
30%
k
resistance UNR4119
1
UNR411H/411M
2.2
UNR4116/411F/411L/411N
4.7
UNR4111/4114/4115
10
UNR4112/4117
22
UNR4110/4113/411D/411E
47
Rank
Q
R
S
h
FE
160 to 260
210 to 340
290 to 460
Note)*: h
FE
rank classification (UNR4110/4115/4116/4117)
相關PDF資料 |
PDF描述 |
|---|---|
| UN411M | Composite Device - Transistors with built-in Resistor |
| UNR411N | Composite Device - Transistors with built-in Resistor |
| UN411N | Composite Device - Transistors with built-in Resistor |
| UNR4121 | Composite Device - Transistors with built-in Resistor |
| UN4121 | Composite Device - Transistors with built-in Resistor |
相關代理商/技術參數 |
參數描述 |
|---|---|
| UNR411M(UN411M) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Composite Device - Transistors with built-in Resistor |
| UNR411N | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planar type |
| UNR411N(UN411N) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:複合デバイス － 抵抗內蔵型トランジスタ |
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