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參數(shù)資料
| 型號： | UNR2211(UN2211) |
| 英文描述： | Composite Device - Transistors with built-in Resistor |
| 中文描述： | 復合裝置-內置晶體管，電阻， |
| 文件頁數(shù)： | 2/17頁 |
| 文件大?。?/td> | 280K |
| 代理商： | UNR2211(UN2211) |
UNR22XX Series
2
SJH00010BED
I
Electrical Characteristics
T
a
=
25
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector cutoff current
I
CBO
V
CB
=
50 V, I
E
=
0
V
CE
=
50 V, I
B
=
0
V
EB
=
6 V, I
C
=
0
0.1
μ
A
I
CEO
I
EBO
0.5
Emitter
cutoff
current
UNR2211
0.5
mA
UNR2212/2214/221D/
221E/221M/221N/221T
0.2
UNR2213
0.1
UNR2210/2215/2216/2217
0.01
UNR221F/221K
1.0
UNR2219
1.5
UNR2218/221L/221V
2.0
UNR221Z
0.4
Collector to base voltage
V
CBO
I
C
=
10
μ
A, I
E
=
0
I
C
=
2 mA, I
B
=
0
V
CE
=
10 V, I
C
=
5 mA
50
V
Collector to emitter voltage
V
CEO
h
FE
50
V
Forward
UNR2211
35
current
UNR2212/221E
60
transfer
UNR2213/2214/221M
80
ratio
UNR2210
*
/2215
*
/2216
*
/2217
*
160
460
UNR2218/221K/221L
20
UNR2219/221D/221F
30
UNR221N/221T
80
400
UNR221V
6
20
UNR221Z
60
200
Collector to emitter saturation voltage
V
CE(sat)
I
C
=
10 mA, I
B
=
0.3 mA
I
C
=
10 mA, I
B
=
1.5 mA
V
CC
=
5 V, V
B
=
0.5 V, R
L
=
1 k
V
CC
=
5 V, V
B
=
2.5 V, R
L
=
1 k
V
CC
=
5 V, V
B
=
3.5 V, R
L
=
1 k
V
CC
=
5 V, V
B
=
10 V, R
L
=
1 k
V
CC
=
5 V, V
B
=
6 V, R
L
=
1 k
V
CB
=
10 V, I
E
=
2 mA, f
=
200 MHz
0.25
V
UNR221V
0.04
0.25
Output voltage high level
V
OH
V
OL
4.9
V
Output voltage low level
0.2
V
UNR2213/221K
UNR221D
UNR221E
Transition frequency
f
T
150
MHz
Input
UNR2218
R
1
30%
0.51
+
30%
k
resis-
UNR2219
1
tance
UNR221M/221V
2.2
UNR2216/221F/221L/221N
UNR221Z
4.7
UNR2211/2214/2215/221K
10
UNR2212/2217/221T
22
UNR2210/2213/221D/221E
47
Note)*: h
FE
rank classification (UNR2210/2215/2216/2217)
Rank
Q
R
S
h
FE
160 to 260
210
to 340
290 to 460
相關PDF資料 |
PDF描述 |
|---|---|
| UNR2226(UN2226) | UNR2226 (UN2226) - NPN Transistor with built-in Resistor |
| UNR2224(UN2224) | 複合デバイス － 抵抗內蔵型トランジスタ |
| UNR2223(UN2223) | Composite Device - Transistors with built-in Resistor |
| UNR2222(UN2222) | Composite Device - Transistors with built-in Resistor |
| UNR2221(UN2221) | Composite Device - Transistors with built-in Resistor |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| UNR2212 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planar transistor |
| UNR2212(UN2212) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Composite Device - Transistors with built-in Resistor |
| UNR221200L | 功能描述:TRANS NPN W/RES 60 HFE MINI 3P RoHS:是 類別:分離式半導體產品 >> 晶體管(BJT) - 單路﹐預偏壓式 系列:- 標準包裝:10,000 系列:- 晶體管類型:NPN - 預偏壓 電流 - 集電極 (Ic)（最大）:100mA 電壓 - 集電極發(fā)射極擊穿（最大）:50V 電阻器 - 基極 (R1)（歐）:47k 電阻器 - 發(fā)射極 (R2)（歐）:47k 在某 Ic、Vce 時的最小直流電流增益 (hFE):70 @ 5mA，5V Ib、Ic條件下的Vce飽和度（最大）:300mV @ 500µA，10mA 電流 - 集電極截止（最大）:- 頻率 - 轉換:100MHz 功率 - 最大:250mW 安裝類型:表面貼裝 封裝/外殼:SC-70，SOT-323 供應商設備封裝:PG-SOT323-3 包裝:帶卷 (TR) 其它名稱:SP000756242 |
| UNR2213 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planar transistor |
| UNR2213(UN2213) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Composite Device - Transistors with built-in Resistor |
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