參數(shù)資料
型號(hào): UNR2210Q
英文描述: TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SC-59
中文描述: 晶體管| 50V五(巴西)總裁| 100mA的一(c)|律師- 59
文件頁(yè)數(shù): 1/18頁(yè)
文件大?。?/td> 284K
代理商: UNR2210Q
1
Transistors with built-in Resistor
UNR2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/
221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z
(UN2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/
221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z)
Silicon NPN epitaxial planer transistor
For digital circuits
I
Features
G
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
G
Mini type package, allowing downsizing of the equipment and
automatic insertion through tape packing and magazine packing.
I
Resistance by Part Number
Marking Symbol
G
UNR2211
8A
G
UNR2212
8B
G
UNR2213
8C
G
UNR2214
8D
G
UNR2215
8E
G
UNR2216
8F
4.7k
G
UNR2217
8H
G
UNR2218
8I
0.51k
G
UNR2219
8K
G
UNR2210
8L
G
UNR221D
8M
G
UNR221E
8N
G
UNR221F
8O
4.7k
G
UNR221K
8P
G
UNR221L
8Q
4.7k
G
UNR221M
EL
2.2k
G
UNR221N
EX
4.7k
G
UNR221T
EZ
G
UNR221V
FD
2.2k
G
UNR221Z
FF
4.7k
I
Absolute Maximum Ratings
(Ta=25C)
Parameter
Symbol
(R
1
)
10k
22k
47k
10k
10k
(R
2
)
10k
22k
47k
47k
5.1k
10k
10k
22k
10k
4.7k
4.7k
47k
47k
47k
2.2k
22k
22k
1k
47k
47k
47k
10k
22k
1:Base
2:Emitter
3:Collector
EIAJ:SC-59
Mini Type Package
Unit: mm
Internal Connection
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
I
C
P
T
T
j
T
stg
50
V
Collector to emitter voltage
50
V
Collector current
100
mA
Total power dissipation
200
mW
Junction temperature
150
C
Storage temperature
–55 to +150
C
2.8
+0.2
–0.3
1.5
+0.25
–0.05
0.65
±
0.15
0.65
±
0.15
3
1
2
0
0
1
±
0
0
+
1
+
0
0.4
±
0.2
0
0
+
1
0.1 to 0.3
2
+
B
C
R1
R2
E
Note) The part number
s
in the parenthesis show conventional part number.
相關(guān)PDF資料
PDF描述
UN2210Q 16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit (8-bit or 16-bit wide) MICROWIRE® serial access EEPROM
UN2210R 4 Kbit, 2 Kbit and 1 Kbit serial SPI bus EEPROM with high-speed clock
UN2210S 4 Kbit, 2 Kbit and 1 Kbit serial SPI bus EEPROM with high-speed clock
UN2215Q TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SC-59
UN2215R TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SC-59
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
UNR2210R 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SC-59
UNR2210S 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SC-59
UNR2211 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR
UNR2211(UN2211) 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:Composite Device - Transistors with built-in Resistor
UNR221100L 功能描述:TRANS NPN W/RES 35 HFE MINI 3P RoHS:是 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路﹐預(yù)偏壓式 系列:- 標(biāo)準(zhǔn)包裝:10,000 系列:- 晶體管類(lèi)型:NPN - 預(yù)偏壓 電流 - 集電極 (Ic)(最大):100mA 電壓 - 集電極發(fā)射極擊穿(最大):50V 電阻器 - 基極 (R1)(歐):47k 電阻器 - 發(fā)射極 (R2)(歐):47k 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):70 @ 5mA,5V Ib、Ic條件下的Vce飽和度(最大):300mV @ 500µA,10mA 電流 - 集電極截止(最大):- 頻率 - 轉(zhuǎn)換:100MHz 功率 - 最大:250mW 安裝類(lèi)型:表面貼裝 封裝/外殼:SC-70,SOT-323 供應(yīng)商設(shè)備封裝:PG-SOT323-3 包裝:帶卷 (TR) 其它名稱(chēng):SP000756242