參數(shù)資料
型號(hào): UNR212Y
廠商: PANASONIC CORP
元件分類: 小信號(hào)晶體管
英文描述: Silicon PNP epitaxial planar type
中文描述: 500 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN
文件頁(yè)數(shù): 1/7頁(yè)
文件大?。?/td> 176K
代理商: UNR212Y
Transistors with built-in Resistor
UNR212x Series
(UN212x Series)
Silicon PNP epitaxial planar type
1
Publication date: December 2003
SJH00008CED
For digital circuits
Features
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
Mini type package allowing easy automatic insertion through tape
packing and magazine packing
Resistance by Part Number
Marking Symbol (R
1
)
(UN2121)
7A
(UN2122)
7B
(UN2123)
7C
(UN2124)
7D
UNR212X (UN212X)
UNR212Y (UN212Y)
(R
2
)
2.2 k
4.7 k
10 k
10 k
5 k
4.6 k
UNR2121
UNR2122
UNR2123
UNR2124
2.2 k
4.7 k
10 k
2.2 k
0.27 k
3.1 k
7I
7Y
Absolute Maximum Ratings
T
a
=
25
°
C
B
R
1
R
2
C
E
Internal Connection
Unit: mm
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
0.40
+0.10
(
1
+
2
+
2
1
3
(0.95) (0.95)
1.9
±
0.1
2.90
+0.20
0.16
+0.10
0
±
0
5
10
0
1
+
1
+
Note) The part numbers in the parenthesis show conventional part number.
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
50
50
500
V
Collector-emitter voltage (Base open)
V
CEO
V
Collector current
I
C
P
T
mA
Total power dissipation
200
mW
Junction temperature
T
j
150
°
C
°
C
Storage temperature
T
stg
55 to
+
150
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
=
10
μ
A, I
E
=
0
I
C
=
2 mA, I
B
=
0
V
CB
=
50 V, I
E
=
0
50
50
V
Collector-emitter voltage (Base open)
V
CEO
I
CBO
V
Collector-base cutoff current (Emitter open)
1.0
0.1
1.0
0.5
5
2
1
μ
A
UNR212X
Collector-emitter cutoff current (Base open)
I
CEO
V
CE
=
50 V, I
B
=
0
μ
A
UNR212X
Emitter-base
UNR2121
I
EBO
V
EB
=
6 V, I
C
=
0
mA
cutoff current UNR2122/212X/212Y
(Collector open)
UNR2123/2124
Forward current
UNR2121
h
FE
V
CE
=
10 V, I
C
=
5 mA
40
transfer ratio
UNR2122/212Y
50
UNR2123/2124
60
UNR212X
20
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
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