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參數(shù)資料
| 型號(hào)： | UNR212Y |
| 英文描述： | Composite Device - Transistors with built-in Resistor |
| 中文描述： | 復(fù)合裝置-內(nèi)置晶體管，電阻， |
| 文件頁(yè)數(shù)： | 1/18頁(yè) |
| 文件大?。?/td> | 283K |
| 代理商： | UNR212Y |
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1
Transistors with built-in Resistor
UNR2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
(UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z)
Silicon PNP epitaxial planer transistor
For digital circuits
I
Features
G
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
G
Mini type package, allowing downsizing of the equipment and
automatic insertion through tape packing and magazine packing.
I
Resistance by Part Number
Marking Symbol
G
UNR2111
6A
G
UNR2112
6B
G
UNR2113
6C
G
UNR2114
6D
G
UNR2115
6E
G
UNR2116
6F
4.7k
G
UNR2117
6H
G
UNR2118
6I
0.51k
G
UNR2119
6K
G
UNR2110
6L
G
UNR211D
6M
G
UNR211E
6N
G
UNR211F
6O
4.7k
G
UNR211H
6P
2.2k
G
UNR211L
6Q
4.7k
G
UNR211M
EI
2.2k
G
UNR211N
EW
4.7k
G
UNR211T
EY
G
UNR211V
FC
2.2k
G
UNR211Z
FE
4.7k
I
Absolute Maximum Ratings
(Ta=25C)
Parameter
Symbol
(R
1
)
10k
22k
47k
10k
10k
(R
2
)
10k
22k
47k
47k
—
—
—
5.1k
10k
—
10k
22k
10k
10k
4.7k
47k
47k
47k
2.2k
22k
22k
1k
47k
47k
47k
22k
1:Base
2:Emitter
3:Collector
EIAJ:SC-59
Mini Type Package
Unit: mm
Internal Connection
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
I
C
P
T
T
j
T
stg
–50
V
Collector to emitter voltage
–50
V
Collector current
–100
mA
Total power dissipation
200
mW
Junction temperature
150
C
Storage temperature
–55 to +150
C
2.8
+0.2
–0.3
1.5
+0.25
–0.05
0.65
±
0.15
0.65
±
0.15
3
1
2
0
0
1
±
0
0
+
–
1
+
–
0
0.4
±
0.2
0
0
+
–
1
0.1 to 0.3
2
+
–
B
C
R1
R2
E
Note) The part number
s
in the parenthesis show conventional part number.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| UN212Y | Composite Device - Transistors with built-in Resistor |
| UNR2154 | Composite Device - Transistors with built-in Resistor |
| UN2154 | Composite Device - Transistors with built-in Resistor |
| UNR2110(UN2110) | 複合デバイス － 抵抗內(nèi)蔵型トランジスタ |
| UNR2110Q | TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-23 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UNR212Y(UN212Y) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:複合デバイス － 抵抗內(nèi)蔵型トランジスタ |
| UNR2-1410 | 制造商:RIEDON 制造商全稱:Riedon Powertron 功能描述:Precision Foil Resistors |
| UNR2-14102R5X | 制造商:WILLOW 制造商全稱:Willow Technologies Ltd 功能描述:Highest Stability Near Temperature Independency |
| UNR2-141037OHMS | 制造商:RIEDON 制造商全稱:Riedon Powertron 功能描述:Precision Foil Resistors |
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