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參數(shù)資料
| 型號(hào)： | UNR211N(UN211N) |
| 英文描述： | Composite Device - Transistors with built-in Resistor |
| 中文描述： | 復(fù)合裝置-內(nèi)置晶體管，電阻， |
| 文件頁數(shù)： | 16/18頁 |
| 文件大小： | 283K |
| 代理商： | UNR211N(UN211N) |
16
Transistors with built-in Resistor
UN
R
2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
I
O
— V
IN
V
IN
— I
O
–1
–0.4
–10
–100
–1000
–10000
–1.4
–1.2
–1
–0.8
–0.6
Input voltage V
IN
(V)
O
O
μ
A
V
O
=–5V
Ta=25C
–0.01
–0.1
–0.1
–1
–10
–100
–1
–10
–100
I
I
Output current I
O
(mA)
V
O
=–0.2V
Ta=25C
Characteristics charts of UN
R
211V
I
C
— V
CE
V
CE(sat)
— I
C
h
FE
— I
C
I
O
— V
IN
V
IN
— I
O
0
0
–12
–2
–10
–4
–8
–6
–12
–10
–8
–6
–4
–2
Collector to emitter voltage V
CE
(V)
C
C
Ta=25C
I
B
=–1.0mA
–0.7mA
–0.8mA
–0.9mA
–0.6mA
–0.5mA
–0.4mA
–0.3mA
–0.2mA
–0.1mA
–0.01
–1
–0.1
–1
–10
–10
–100
–1000
Collector current I
C
(mA)
C
C
I
C
/I
B
=10
Ta=75C
25C
–25C
0
–1
12
10
8
6
4
2
–10
–100
F
F
Collector current I
C
(mA)
V
CE
=–10V
Ta=75C
25C
–25C
–1
–0.4
–10
–100
–1000
–10000
–1.4
–1.2
–1
–0.8
–0.6
Input voltage V
IN
(V)
O
O
μ
A
V
O
=–5V
Ta=25C
–0.01
–0.1
–0.1
–1
–10
–100
–1
–10
–100
I
I
Output current I
O
(mA)
V
O
=–0.2V
Ta=25C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| UNR211T(UN211T) | Composite Device - Transistors with built-in Resistor |
| UNR211V(UN211V) | Composite Device - Transistors with built-in Resistor |
| UNR211W | HIGH SIDE DRIVER |
| UNR211XSERIES(UN211XSERIES) | HIGH SIDE DRIVER |
| UNR211Z(UN211Z) | HIGH SIDE DRIVER |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UNR211T | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planar type |
| UNR211T(UN211T) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Composite Device - Transistors with built-in Resistor |
| UNR211V | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planar type |
| UNR211V(UN211V) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Composite Device - Transistors with built-in Resistor |
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