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參數(shù)資料
| 型號： | UNR211D(UN211D) |
| 英文描述： | uPSD33xx (Turbo Series) Fast 8032 MCU with Programmable Logic |
| 中文描述： | 複合デバイス-抵抗內(nèi)蔵型トランジスタ |
| 文件頁數(shù)： | 8/18頁 |
| 文件大?。?/td> | 283K |
| 代理商： | UNR211D(UN211D) |
8
Transistors with built-in Resistor
C
ob
— V
CB
I
O
— V
IN
V
IN
— I
O
Characteristics charts of UN
R
2117
I
C
— V
CE
V
CE(sat)
— I
C
h
FE
— I
C
C
ob
— V
CB
I
O
— V
IN
V
IN
— I
O
UN
R
2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
0
Collector to base voltage V
CB
(V)
6
5
4
3
2
1
–1
–3
–10
–30
–100
C
o
f=1MHz
I
E
=0
Ta=25C
–1
–0.4
–3
–10
–30
–100
–300
–1000
–3000
–10000
–1.4
–1.2
–1.0
–0.8
–0.6
Input voltage V
IN
(V)
O
O
μ
A
V
O
=–5V
Ta=25C
–0.01
–0.03
–0.1 –0.3
–0.1
–0.3
–1
–3
–10
–30
–100
–1
–3
–10
–30
–100
I
I
Output current I
O
(mA)
V
O
=–0.2V
Ta=25C
0
0
–12
–2
–10
–4
–8
–6
–120
–100
–80
–60
–40
–20
Collector to emitter voltage V
CE
(V)
C
C
Ta=25C
I
B
=–1.0mA
–0.9mA
–0.8mA
–0.6mA
–0.5mA
–0.4mA
–0.3mA
–0.2mA
–0.1mA
–0.01
–0.03
–0.1 –0.3
–0.1
–0.3
–1
–3
–10
–30
–100
–1
–3
–10
–30
–100
Collector current I
C
(mA)
C
C
I
C
/I
B
=10
Ta=75C
25C
–25C
0
–1
–3
100
200
300
400
–10
–30
–100 –300 –1000
F
F
Collector current I
C
(mA)
V
CE
=–10V
Ta=75C
25C
–25C
0
Collector to base voltage V
CB
(V)
6
5
4
3
2
1
–1
–3
–10
–30
–100
C
o
f=1MHz
I
E
=0
Ta=25C
–1
–0.4
–3
–10
–30
–100
–300
–1000
–3000
–10000
–1.4
–1.2
–1.0
–0.8
–0.6
Input voltage V
IN
(V)
O
O
μ
A
V
O
=–5V
Ta=25C
–0.01
–0.03
–0.1 –0.3
–0.1
–0.3
–1
–3
–10
–30
–100
–1
–3
–10
–30
–100
I
I
Output current I
O
(mA)
V
O
=–0.2V
Ta=25C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UNR211E | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planar type |
| UNR211E(UN211E) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Composite Device - Transistors with built-in Resistor |
| UNR211E00L | 功能描述:TRANS PNP W/RES 60 HFE MINI 3P RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路﹐預(yù)偏壓式 系列:- 標準包裝:10,000 系列:- 晶體管類型:NPN - 預(yù)偏壓 電流 - 集電極 (Ic)（最大）:100mA 電壓 - 集電極發(fā)射極擊穿（最大）:50V 電阻器 - 基極 (R1)（歐）:47k 電阻器 - 發(fā)射極 (R2)（歐）:47k 在某 Ic、Vce 時的最小直流電流增益 (hFE):70 @ 5mA，5V Ib、Ic條件下的Vce飽和度（最大）:300mV @ 500µA，10mA 電流 - 集電極截止（最大）:- 頻率 - 轉(zhuǎn)換:100MHz 功率 - 最大:250mW 安裝類型:表面貼裝 封裝/外殼:SC-70，SOT-323 供應(yīng)商設(shè)備封裝:PG-SOT323-3 包裝:帶卷 (TR) 其它名稱:SP000756242 |
| UNR211F | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planar type |
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