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參數(shù)資料
| 型號： | UNR2115Q |
| 英文描述： | TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-23 |
| 中文描述： | 晶體管| 50V五（巴西）總裁| 100mA的一（c）| SOT - 23封裝 |
| 文件頁數(shù)： | 4/18頁 |
| 文件大?。?/td> | 283K |
| 代理商： | UNR2115Q |
4
Transistors with built-in Resistor
Common characteristics chart
P
T
— Ta
Characteristics charts of UN
R
2111
I
C
— V
CE
V
CE(sat)
— I
C
h
FE
— I
C
C
ob
— V
CB
I
O
— V
IN
V
IN
— I
O
UN
R
2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
0
0
–12
–2
–10
–4
–8
–6
–40
–120
–80
–160
–140
–100
–60
–20
Collector to emitter voltage V
CE
(V)
C
C
Ta=25C
I
B
=–1.0mA
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–0.5mA
–0.4mA
–0.3mA
–0.2mA
–0.1mA
–0.01
–0.03
–0.1 –0.3
–0.1
–0.3
–1
–3
–10
–30
–100
–1
–3
–10
–30
–100
Collector current I
C
(mA)
C
C
I
C
/I
B
=10
Ta=75C
25C
–25C
0
–1
–3
40
80
120
160
–10
–30
–100 –300 –1000
F
F
Collector current I
C
(mA)
V
CE
=–10V
Ta=75C
25C
–25C
0
Collector to base voltage V
CB
(V)
6
5
4
3
2
1
–1
–3
–10
–30
–100
C
o
f=1MHz
I
E
=0
Ta=25C
–1
–0.4
–
3
–10
–30
–100
–300
–1000
–3000
–10000
–1.4
–1.2
–1.0
–0.8
–0.6
Input voltage V
IN
(V)
O
O
μ
A
V
O
=–5V
Ta=25C
–0.01
–0.03
–0.1 –0.3
–0.1
–0.3
–1
–3
–10
–30
–100
–1
–3
–10
–30
–100
I
I
Output current I
O
(mA)
V
O
=–0.2V
Ta=25C
0
50
100
150
200
250
0
20
40
80
60
140
120
100
160
Ambient temperature Ta (C)
T
T
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UNR2115R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-23 |
| UNR2115S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-23 |
| UNR2116 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planar type |
| UNR2116(UN2116) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:複合デバイス － 抵抗內(nèi)蔵型トランジスタ |
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