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參數(shù)資料
| 型號： | UNR1231 |
| 英文描述： | Composite Device - Transistors with built-in Resistor |
| 中文描述： | 復合裝置-內(nèi)置晶體管，電阻， |
| 文件頁數(shù)： | 2/14頁 |
| 文件大?。?/td> | 454K |
| 代理商： | UNR1231 |
2
UNR121x
SJH00003BJD
■
T
a
=
25
°
C
±
3
°
C
(E
)
V
CBO
V
CEO
I
C
=
10
μ
A, I
E
=
0
I
C
=
2 mA, I
B
=
0
V
CB
=
50 V, I
E
=
0
V
CE
=
50 V, I
B
=
0
V
EB
=
6 V, I
C
=
0
50
V
(B
)
50
V
(E
)
I
CBO
0.1
μ
A
μ
A
(B
)
I
CEO
I
EBO
0.5
UNR1211
0.5
mA
UNR1212/1214/121D/121E
0.2
UNR1213
0.1
(C
)
UNR1210/1215/1216/1217
0.01
UNR121F/121K
1.0
UNR1219
1.5
UNR1218/121L
2.0
UNR1211
h
FE
V
CE
= 10 V, I
C
= 5 mA
35
UNR1212/121E
60
UNR1213/1214
80
160
UNR1210
*
/1215
*
/1216
*
/
1217
*
460
UNR1219/121D/121F
30
UNR1218/121K/121L
20
V
CE(sat)
I
C
=
10 mA, I
B
=
0.3 mA
V
CC
=
5 V, V
B
=
0.5 V, R
L
=
1 k
V
CC
=
5 V, V
B
=
2.5 V, R
L
=
1 k
V
CC
=
5 V, V
B
=
3.5 V, R
L
=
1 k
V
CC
=
5 V, V
B
=
10 V, R
L
=
1 k
V
CC
=
5 V, V
B
=
6 V, R
L
=
1 k
V
CB
=
10 V, I
E
=
2 mA, f
=
200 MHz
0.25
V
V
OH
4.9
V
V
OL
0.2
V
UNR1213/121K
UNR121D
UNR121E
f
T
80
MHz
UNR1211/1214/1215/121K
R
1
30%
10
+
30%
k
UNR1212/1217
22
UNR1210/1213/121D/121E
47
UNR1216/121F/121L
4.7
UNR1218
0.51
UNR1219
1
UNR1211/1212/1213/121L
R
1
/R
2
0.8
1.0
1.2
UNR1214
0.17
0.21
0.25
UNR1218/1219
0.08
0.1
0.12
UNR121D
4.7
UNR121E
2.14
UNR121F
0.47
UNR121K
2.13
Q
R
S
h
FE
160
～
260
210
～
340
290
～
460
) 1.
JIS C 7030
2. * :
(UNR1210/1215/1216/1217)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| UN1231 | Composite Device - Transistors with built-in Resistor |
| UNR1231A | Composite Device - Transistors with built-in Resistor |
| UN1231A | Composite Device - Transistors with built-in Resistor |
| UNR1210 | Composite Device - Transistors with built-in Resistor |
| UN1210 | Composite Device - Transistors with built-in Resistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UNR1231(UN1231) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:複合デバイス － 抵抗內(nèi)蔵型トランジスタ |
| UNR1231/1231A(UN1231/1231A) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:UNR1231/1231A (UN1231/1231A) - NPN Transistor with built-in Resistor |
| UNR1231A(UN1231A) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:複合デバイス － 抵抗內(nèi)蔵型トランジスタ |
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