參數(shù)資料
型號(hào): UNR1218
英文描述: Composite Device - Transistors with built-in Resistor
中文描述: 復(fù)合裝置-內(nèi)置晶體管,電阻,
文件頁(yè)數(shù): 8/14頁(yè)
文件大?。?/td> 454K
代理商: UNR1218
8
UNR121x
SJH00003BJD
C
ob
V
CB
I
O
V
IN
V
IN
I
O
UNR1217
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
UNR1218
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
0
12
2
10
4
8
6
0
120
100
80
60
40
20
C
V
CE
(V)
T
a
=
25
°
C
I
B
=
1 .0 mA
0.90.8 mA
0.1 mA
0.2 mA
0.3 mA
0.4 mA
0.5 mA
0.7 0.6 mA
0.01
0.1
0.1
1
10
100
1
10
100
I
C
/ I
B
=
10
T
a
=
75
°
C
25
°
C
25
°
C
C
I
C
(mA)
0
1
100
200
300
400
10
100
1
000
F
I
C
(mA)
V
CE
=
10 V
T
a
=
75
°
C
25
°
C
25
°
C
0
0.1
6
5
4
3
2
1
1
10
100
f
=
1 MHz
I
E
=
0
T
a
=
25
°
C
V
CB
(V)
(
)
o
1
0.4
10
10
2
10
3
10
4
1.4
1.2
1.0
0.8
0.6
V
O
=
5 V
T
a
=
25
°
C
O
μ
A
V
IN
(V)
0.01
0.1
0.1
1
10
100
1
10
100
I
I
O
(mA)
V
O
=
0.2 V
T
a
=
25
°
C
0
12
2
10
4
8
6
0
240
200
160
120
80
40
C
V
CE
(V)
T
a
=
25
°
C
I
B
=
1.0 mA
0.1 mA
0.2 mA
0.3 mA
0.4 mA
0.5 mA
0.6 mA
0.90.80.7 mA
0.01
0.1
0.1
1
10
100
1
10
100
C
I
C
(mA)
I
C
/ I
B
=
10
T
a
=
75
°
C
25
°
C
25
°
C
0
1
40
80
120
160
10
100
1
000
F
I
C
(mA)
V
CE
=
10 V
T
a
= 75
°
C
25
°
C
25
°
C
相關(guān)PDF資料
PDF描述
UN1218 Composite Device - Transistors with built-in Resistor
UN121D Composite Device - Transistors with built-in Resistor
UNR121E Composite Device - Transistors with built-in Resistor
UN121E Composite Device - Transistors with built-in Resistor
UNR121F Composite Device - Transistors with built-in Resistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
UNR1218(UN1218) 制造商:未知廠家 制造商全稱:未知廠家 功能描述:複合デバイス - 抵抗內(nèi)蔵型トランジスタ
UNR1219 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planar type
UNR1219(UN1219) 制造商:未知廠家 制造商全稱:未知廠家 功能描述:複合デバイス - 抵抗內(nèi)蔵型トランジスタ