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參數資料
| 型號： | UNR1216S |
| 英文描述： | TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SC-71 |
| 中文描述： | 晶體管| 50V五（巴西）總裁| 100mA的一（c）|律師- 71 |
| 文件頁數： | 1/14頁 |
| 文件大?。?/td> | 228K |
| 代理商： | UNR1216S |
1
Transistors with built-in Resistor
UNR1211/1212/1213/1214/1215/1216/1217/1218/1219/1210/
121D/121E/121F/121K/121L
(UN1211/1212/1213/1214/1215/1216/1217/1218/1219/1210/
121D/121E/121F/121K/121L)
Silicon NPN epitaxial planer transistor
For digital circuits
I
Features
G
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
G
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
I
Resistance by Part Number
(R
1
)
10k
22k
47k
10k
10k
4.7k
22k
0.51k
1k
47k
47k
47k
4.7k
10k
4.7k
(R
2
)
10k
22k
47k
47k
—
—
—
5.1k
10k
—
10k
22k
10k
4.7k
4.7k
G
UNR1211
G
UNR1212
G
UNR1213
G
UNR1214
G
UNR1215
G
UNR1216
G
UNR1217
G
UNR1218
G
UNR1219
G
UNR1210
G
UNR121D
G
UNR121E
G
UNR121F
G
UNR121K
G
UNR121L
I
Absolute Maximum Ratings
(Ta=25C)
Parameter
1:Base
2:Collector
3:Emitter
M Type Mold Package
Unit: mm
Internal Connection
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
50
V
Collector to emitter voltage
50
V
Collector current
I
C
P
T
T
j
100
mA
Total power dissipation
400
mW
Junction temperature
150
C
Storage temperature
T
stg
–55 to +150
C
6.9
±
0.1
0.55
±
0.1
0.45
±
0.05
1
±
0
1
2.5
±
0.1
1.0
1.5
1.5 R0.9
R0.9
R07
0
0.85
3
±
0
2
±
0
2
±
0
1
±
0
4
±
0
4
±
0
2.5
2.5
1
2
3
B
C
R1
R2
E
Note) The part number
s
in the parenthesis show conventional part number.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| UNR1217 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planar type |
| UNR1217(UN1217) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:複合デバイス － 抵抗內蔵型トランジスタ |
| UNR1217Q | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SC-71 |
| UNR1217R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SC-71 |
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