參數(shù)資料
型號(hào): UNR1210S
英文描述: Low drop power Schottky rectifier
中文描述: 晶體管| 50V五(巴西)總裁| 100mA的一(c)|律師- 71
文件頁(yè)數(shù): 8/14頁(yè)
文件大?。?/td> 228K
代理商: UNR1210S
8
Transistors with built-in Resistor
Characteristics charts of UNR1218
I
C
— V
CE
V
CE(sat)
— I
C
h
FE
— I
C
C
ob
— V
CB
I
O
— V
IN
V
IN
— I
O
Characteristics charts of UNR1219
I
C
— V
CE
V
CE(sat)
— I
C
h
FE
— I
C
0
12
2
10
4
8
6
0
240
200
160
120
80
40
Collector to emitter voltage V
CE
(V)
C
C
Ta=25
C
I
B
=1.0.9mA
0.1mA
0.2mA
0.3mA
0.4mA
0.5mA
0.6mA
0.80.7mA
0.01
0.03
0.1
0.3
Collector current I
C
(mA)
0.1
0.3
1
3
10
30
100
1
3
10
30
100
C
C
I
C
/I
B
=10
Ta=75
C
25
C
25
C
0
1
3
40
80
120
160
10
30
100
300
1000
F
F
Collector current I
C
(mA)
V
CE
=10V
Ta=75
C
25
C
25
C
0
0.1
0.3
6
5
4
3
2
1
1
3
10
30
100
C
o
Collector to base voltage V
CB
(V)
f=1MHz
I
E
=0
Ta=25
C
1
0.4
3
10
30
100
300
1000
3000
10000
1.4
1.2
1.0
0.8
0.6
Input voltage V
IN
(V)
O
O
μ
A
V
O
=5V
Ta=25
C
0.01
0.03
0.1
0.3
Output current I
O
(mA)
0.1
0.3
1
3
10
30
100
1
3
10
30
100
I
I
V
O
=0.2V
Ta=25
C
0
12
2
10
4
8
6
0
240
200
160
120
80
40
Collector to emitter voltage V
CE
(V)
C
C
Ta=25
C
I
B
=1.0.9mA
0.1mA
0.2mA
0.3mA
0.4mA
0.5mA
0.6mA
0.80.7mA
0.01
0.03
0.1
0.3
Collector current I
C
(mA)
0.1
0.3
1
3
10
30
100
1
3
10
30
100
C
C
I
C
/I
B
=10
Ta=75
C
25
C
25
C
0
1
3
40
80
120
160
10
30
100
300
1000
F
F
Collector current I
C
(mA)
V
CE
=10V
Ta=75
C
25
C
25
C
UNR1211/1212/1213/1214/1215/1216/1217/1218/
1219/1210/121D/121E/121F/121K/121L
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PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
UNR1211 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN, PNP epitaxial planar type (Tr1,2)
UNR1211(UN1211) 制造商:未知廠家 制造商全稱:未知廠家 功能描述:複合デバイス - 抵抗內(nèi)蔵型トランジスタ
UNR1212 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planar type
UNR1212(UN1212) 制造商:未知廠家 制造商全稱:未知廠家 功能描述:複合デバイス - 抵抗內(nèi)蔵型トランジスタ