參數(shù)資料
型號: UNR1210
廠商: PANASONIC CORP
元件分類: 小信號晶體管
英文描述: Silicon NPN epitaxial planar type
中文描述: 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝: M-A1, 3 PIN
文件頁數(shù): 1/14頁
文件大?。?/td> 347K
代理商: UNR1210
Transistors with built-in Resistor
UNR121x Series
(UN121x Series)
Silicon NPN epitaxial planar type
1
Publication date: October 2003
SJH00003BED
For digital circuits
Features
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board
Resistance by Part Number
(R
1
)
47 k
10 k
22 k
47 k
10 k
10 k
4.7 k
22 k
0.51 k
1 k
47 k
47 k
4.7 k
10 k
4.7 k
(R
2
)
10 k
22 k
47 k
47 k
5.1 k
10 k
10 k
22 k
10 k
4.7 k
4.7 k
UNR1210 (UN1210)
UNR1211 (UN1211)
UNR1212 (UN1212)
UNR1213 (UN1213)
UNR1214 (UN1214)
UNR1215 (UN1215)
UNR1216 (UN1216)
UNR1217 (UN1217)
UNR1218 (UN1218)
UNR1219 (UN1219)
UNR121D (UN121D)
UNR121E (UN121E)
UNR121F (UN121F)
UNR121K (UN121K)
UNR121L (UN121L)
Absolute Maximum Ratings
T
a
=
25
°
C
B
R
1
R
2
C
E
Internal Connection
Unit: mm
1: Base
2: Collector
3: Emitter
M-A1 Package
Note) The part numbers in the parenthesis show conventional part number.
6.9
±
0.1
2.5
±
0.1
(1.0)
(
(1.5)
(0.85)
0.55
±
0.1
0.45
±
0.05
(2.5)
(2.5)
2
1
3
R 0.7
R 0.9
(
3
±
0
4
±
0
4
±
0
2
±
0
1
±
0
2
±
0
1
±
0
(1.5)
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
50
V
Collector-emitter voltage (Base open)
V
CEO
50
V
Collector current
I
C
P
T
100
mA
Total power dissipation
400
mW
Junction temperature
T
j
150
°
C
°
C
Storage temperature
T
stg
55 to
+
150
相關PDF資料
PDF描述
UNR1213 Silicon NPN epitaxial planar type
UNR1214 Silicon NPN epitaxial planar type
UNR1215 Silicon NPN epitaxial planar type
UNR1216 Silicon NPN epitaxial planar type
UNR1217 Silicon NPN epitaxial planar type
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